Zheng Jia, Wang Ruobing, Fang Wencheng, Li Chengxing, Zhang Jiarui, Wan Ziqi, Chen Yuqing, Liu Jin, Zou Xixi, Xie Li, Wang Qian, Li Xi, Song Sannian, Zhou Xilin, Song Zhitang
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
University of Chinese Academy of Sciences, Beijing, China.
Nat Commun. 2025 Jul 1;16(1):5788. doi: 10.1038/s41467-025-60644-1.
Phase change memory has been regarded as a promising candidate for storage class memory application. However, the high switching current and limited switching endurance remain a critical challenge. In this work a switching endurance beyond 1.1 × 10 cycles is demonstrated in the mushroom-type memory device with nano-cofined structure and carbon-doped GeSbTe material. The over-programming of the memory cell induced by excessive RESET current gives rise to the recrystallization of the active phase change volume which accelerates the inward migration of carbon atoms to the bottom heater. The cyclic switching exacerbates the over-programming effect with denser carbon cluster accumulated at the boundary of the active region which causes the stuck-RESET failure. The nano-confined cell structure enables efficient heating by relocating the melt-quench region away from the interface to the dielectric layer which substantially reduces the RESET energy and, consequently, mitigates the over-programming effect and significantly extends the switching cycles.
相变存储器被认为是存储类存储器应用的一个有前途的候选者。然而，高开关电流和有限的开关耐久性仍然是一个关键挑战。在这项工作中，在具有纳米受限结构和碳掺杂的GeSbTe材料的蘑菇型存储器件中展示了超过1.1×10 次循环的开关耐久性。由过大的复位电流引起的存储单元的过编程导致有源相变体积的再结晶，这加速了碳原子向内迁移到底部加热器。循环开关加剧了过编程效应，在有源区域的边界积累了更密集的碳簇，这导致复位卡住故障。纳米受限单元结构通过将熔淬区域从界面重新定位到介电层来实现高效加热，这大大降低了复位能量，从而减轻了过编程效应并显著延长了开关循环。
