Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
IBM Research-Zurich, Rüschlikon, Switzerland.
Science. 2022 Jun 3;376(6597):eabj9979. doi: 10.1126/science.abj9979.
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
忆阻器设备将电阻器与存储功能结合在一起，使得电压脉冲可以以非易失性的方式改变其电阻（从而改变其存储状态），它们开始被应用于集成电路中的存储应用。然而，忆阻器设备在许多其他技术中也可能有应用，例如交叉阵列中的非冯·诺依曼内存计算、数据安全的随机数生成以及移动通信的射频开关。忆阻器设备在商业固态电子电路和其他潜在应用中的集成进展将取决于仍需要解决的性能和可靠性挑战，正如这里所描述的那样。
