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采用场效应晶体管和可变电容二极管的具有单一调谐特性的可变分数阶电容器的实际设计。

Practical design of variable fractional-order capacitors with a single tuning feature using field effect transistors and variable capacitance diodes.

作者信息

Sotner Roman, Black Chloe, Jerabek Jan, Freeborn Todd, Colburn Simon, Svoboda Marek

机构信息

Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 3082/12, Brno, 616 00, Czech Republic.

Department of Electrical Engineering, Faculty of Military Technology, University of Defence, Sumavska 4, Brno, 602 00, Czech Republic.

出版信息

Sci Rep. 2025 Jul 1;15(1):21892. doi: 10.1038/s41598-025-07319-5.

Abstract

This paper presents two discrete circuit solutions for realizing passive, electronically adjustable constant-phase elements, specifically half-order capacitors with a -45° phase shift. Fractional-order capacitors with electronically adjustable pseudocapacitance are especially useful for designing tunable filters and oscillators. The ability to adjust pseudocapacitance electronically and continuously is a major improvement over traditional passive solutions. Their pseudocapacitance can be controlled by a DC voltage, allowing key parameters like the cut-off or oscillation frequency to be tuned. Two presented design approaches differ in accuracy, tuning range, and signal-handling capability. Both solutions maintain a constant phase over one frequency decade, with a phase ripple within ± 2°. The tuning range spans from hundreds of Hz to several MHz. Presented solutions allow pseudocapacitance tuning in range of hundreds of nano F/sec (with varicaps) and tens of micro F/sec (with MOSFETs). The MOS-based circuit offers a tuning ratio of 7 but shows a 19% deviation between simulation and measurement. It also suffers from notable nonlinearity, with undistorted operation limited to signal levels up to 20 mV peak-to-peak. The varicap-based solution achieves a tuning ratio of 5, with high accuracy (up to 6% error), and handles input signals in the hundreds of mV with acceptable distortion. PSpice simulations and laboratory measurements confirm the performance of both designs.

摘要

本文提出了两种用于实现无源、电子可调恒相元件的分立电路解决方案,具体为具有 -45° 相移的半阶电容器。具有电子可调赝电容的分数阶电容器对于设计可调谐滤波器和振荡器特别有用。与传统无源解决方案相比,能够电子方式连续调节赝电容是一项重大改进。其赝电容可由直流电压控制,从而能够调节诸如截止频率或振荡频率等关键参数。所提出的两种设计方法在精度、调谐范围和信号处理能力方面存在差异。两种解决方案在一个十倍频程内均保持恒定相位,相位纹波在 ±2° 以内。调谐范围从数百赫兹到几兆赫兹。所提出的解决方案允许在数百纳法/秒(使用变容二极管)和数十微法/秒(使用 MOSFET)的范围内调节赝电容。基于 MOS 的电路的调谐比为 7,但在仿真和测量之间存在 19% 的偏差。它还存在明显的非线性,不失真工作仅限于峰峰值高达 20 mV 的信号电平。基于变容二极管的解决方案实现了 5 的调谐比,具有高精度(误差高达 6%),并且能够处理数百毫伏的输入信号,失真可接受。PSpice 仿真和实验室测量证实了两种设计的性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/074e/12219166/f867842313b3/41598_2025_7319_Fig1_HTML.jpg

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