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利用重金属界面实现德热纳绝对超导开关

Realisation of de Gennes' absolute superconducting switch with a heavy metal interface.

作者信息

Matsuki Hisakazu, Hijano Alberto, Mazur Grzegorz P, Ilić Stefan, Wang Binbin, Alekhina Iuliia, Ohnishi Kohei, Komori Sachio, Li Yang, Stelmashenko Nadia, Banerjee Niladri, Cohen Lesley F, McComb David W, Bergeret F Sebastián, Yang Guang, Robinson Jason W A

机构信息

Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, UK.

Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastián, Spain.

出版信息

Nat Commun. 2025 Jul 1;16(1):5674. doi: 10.1038/s41467-025-61267-2.

DOI:10.1038/s41467-025-61267-2
PMID:40595601
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12218286/
Abstract

In 1966, Pierre-Gilles de Gennes proposed a non-volatile mechanism for switching superconductivity on and off in a magnetic device. This involved a superconductor (S) sandwiched between ferromagnetic (F) insulators in which the net magnetic exchange field could be controlled through the magnetisation-orientation of the F layers. Because superconducting switches are attractive for a range of applications, extensive studies have been carried out on F/S/F structures. Although these have demonstrated a sensitivity of the superconducting critical temperature (T) to parallel (P) and antiparallel (AP) magnetisation-orientations of the F layers, corresponding shifts in T (i.e. ΔT = T - T) are lower than predicted with ΔT only a small fraction of T, precluding the development of applications. Here, we report EuS/Au/Nb/EuS structures where EuS is an insulating ferromagnet, Nb is a superconductor and Au is a heavy metal. For P magnetisations, the superconducting state in this structure is quenched down to the lowest measured temperature of 20 mK meaning that ΔT/T is practically 1. The key to this so-called 'absolute switching' effect is a sizable spin-mixing conductance at the EuS/Au interface which ensures a robust magnetic proximity effect, unlocking the potential of F/S/F switches for low power electronics.

摘要

1966年,皮埃尔 - 吉勒·德热纳提出了一种在磁性器件中开启和关闭超导性的非挥发性机制。这涉及到一个夹在铁磁(F)绝缘体之间的超导体(S),其中净磁交换场可以通过F层的磁化方向来控制。由于超导开关在一系列应用中具有吸引力,因此对F/S/F结构进行了广泛的研究。尽管这些研究已经证明了超导临界温度(T)对F层平行(P)和反平行(AP)磁化方向的敏感性,但T的相应变化(即ΔT = T - T)低于预测值,ΔT仅为T的一小部分,这阻碍了应用的发展。在这里,我们报道了EuS/Au/Nb/EuS结构,其中EuS是一种绝缘铁磁体,Nb是超导体,Au是重金属。对于P磁化,该结构中的超导态被猝灭到最低测量温度20 mK,这意味着ΔT/T实际上为1。这种所谓的“绝对开关”效应的关键在于EuS/Au界面处有相当大的自旋混合电导,这确保了强大的磁近邻效应,释放了F/S/F开关在低功耗电子学方面的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/f126b08488bc/41467_2025_61267_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/fd614d2e8789/41467_2025_61267_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/8a1d63f6174e/41467_2025_61267_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/78c60c0f7318/41467_2025_61267_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/f126b08488bc/41467_2025_61267_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/fd614d2e8789/41467_2025_61267_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/8a1d63f6174e/41467_2025_61267_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/78c60c0f7318/41467_2025_61267_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fa8b/12218286/f126b08488bc/41467_2025_61267_Fig4_HTML.jpg

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本文引用的文献

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Ubiquitous Superconducting Diode Effect in Superconductor Thin Films.超导薄膜中普遍存在的超导二极管效应。
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