用于增强发光二极管空穴迁移率量子点的合理杂质掺杂
Rational impurity doping for enhanced hole mobility quantum dots for light-emitting diodes.
作者信息
Yamada Hiroyuki, Nagao Tadaaki, Shirahata Naoto
机构信息
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba 305-0047 Japan.
Graduate School of Chemical Science and Engineering, Hokkaido University Kita 13, Nishi 8, Kita-ku Sapporo 060-8628 Japan.
出版信息
Nanoscale Adv. 2025 Jul 8. doi: 10.1039/d5na00349k.
We report on the impact of impurity doping on the performance enhancement of silicon quantum dot (SiQD) light-emitting diodes. The increase in hole mobility resulting from boron doping increases the external quantum efficiency of electroluminescence by a factor of 12 and the optical power density by a factor of 2.65.
我们报道了杂质掺杂对硅量子点（SiQD）发光二极管性能增强的影响。硼掺杂导致的空穴迁移率增加，使电致发光的外量子效率提高了12倍，光功率密度提高了2.65倍。
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