Zhang Yumeng, Zhang Kexin, Zhang Ruikai, Shi Xinbo, Zhou Guofu, Liu Jun-Ming, Jiang Yue, Wang Zhen, Gao Jinwei
Institute for Advanced Materials & Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Chain Walking New Material Technology (Guangzhou) Co. LTD, Guangzhou 511462, China.
ACS Appl Mater Interfaces. 2025 Aug 6;17(31):44677-44685. doi: 10.1021/acsami.5c12738. Epub 2025 Jul 23.
Formamidinium lead iodide (FAPbI)-based perovskites are promising photoabsorber materials owing to their optimal bandgap and excellent photothermal stability. However, their complex crystallization behavior during blade-coating presents challenges for scalable fabrication, leading to poor perovskite film morphology and uniformity, which adversely affect the performance and stability of perovskite solar cells (PSCs). Herein, a two-dimensional (2D) perovskite seed layer was introduced onto the SnO electron transport layer within a conventional n-i-p device architecture. This seed layer was employed to provide heterogeneous nucleation sites for and to induce the bottom-up-oriented growth of [PbI] octahedra, thereby facilitating the formation of the photoactive α-FAPbI phase with enhanced crystallinity and film uniformity. As a result, PSCs with an active area of 2.5 × 2.5 cm were fabricated, achieving a power conversion efficiency (PCE) of 22.03% and an open-circuit voltage () of 1.10 V. Furthermore, over 80% of the initial efficiency was retained after 2000 h of ambient storage (relative humidity ≈ 5%, temperature ≈ 25 °C) without encapsulation, indicating excellent long-term stability. Through this approach, a viable and scalable pathway has been established for the fabrication of high-quality α-FAPbI films, offering significant potential for the advancement of efficient and stable PSCs.
基于甲脒碘化铅(FAPbI)的钙钛矿因其最佳带隙和出色的光热稳定性而成为很有前景的光吸收材料。然而,它们在刮刀涂布过程中复杂的结晶行为给可扩展制造带来了挑战,导致钙钛矿薄膜形态和均匀性较差,这对钙钛矿太阳能电池(PSC)的性能和稳定性产生不利影响。在此,在传统的n-i-p器件结构中,在SnO电子传输层上引入了二维(2D)钙钛矿籽晶层。该籽晶层用于提供异质成核位点,并诱导[PbI]八面体自下而上定向生长,从而促进具有增强结晶度和薄膜均匀性的光活性α-FAPbI相的形成。结果,制备了活性面积为2.5×2.5 cm的PSC,实现了22.03%的功率转换效率(PCE)和1.10 V的开路电压()。此外,在环境储存2000小时(相对湿度≈5%,温度≈25°C)且未封装的情况下,仍保留了超过80%的初始效率,表明具有出色的长期稳定性。通过这种方法,为高质量α-FAPbI薄膜的制备建立了一条可行且可扩展的途径,为高效稳定PSC的发展提供了巨大潜力。