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基于代工硅光子学的单片集成C波段量子发射器

Monolithically Integrated C-Band Quantum Emitters on Foundry Silicon Photonics.

作者信息

Pettit Robert M, Deckoff-Jones Skylar, Donis Angela, Elias Ana, Briscoe Jayson, Leake Gerald, Coleman Daniel, Fanto Michael, Sundaresh Ananthesh, Gupta Shobhit, Kumar Singh Manish, Sullivan Sean E

机构信息

memQ, Inc, Chicago, Illinois 60615, United States.

The American Institute for Manufacturing Integrated Photonics (AIM Photonics), Albany, New York 12203, United States.

出版信息

Nano Lett. 2025 Aug 6;25(31):11803-11810. doi: 10.1021/acs.nanolett.5c01896. Epub 2025 Jul 28.

DOI:10.1021/acs.nanolett.5c01896
PMID:40719764
Abstract

Solid-state spin-based quantum systems have emerged as popular platforms for quantum networking applications due to their optical interfaces, their long-lived quantum memories, and their natural compatibility with semiconductor manufacturing. Photonic crystal cavities are often used to enhance radiative emission; however, fabrication of the necessary subwavelength cavities is typically limited to small batch electron beam lithography. In this work, we demonstrate high quality factor, small mode volume nanobeam cavities fabricated on a scalable silicon photonic foundry platform. The foundry fabricated cavities are then interfaced with single erbium ions through backend deposition of TiO thin films lightly doped with erbium. Single ion lifetime measurements indicate Purcell enhancement up to about 500, thereby demonstrating a route toward manufacturable deterministic single photon sources in the telecom C-band.

摘要

基于固态自旋的量子系统因其光学接口、长寿命量子存储器以及与半导体制造的天然兼容性,已成为量子网络应用中受欢迎的平台。光子晶体腔通常用于增强辐射发射;然而,所需亚波长腔的制造通常限于小批量电子束光刻。在这项工作中,我们展示了在可扩展的硅光子代工平台上制造的高品质因数、小模式体积的纳米束腔。然后通过后端沉积轻掺杂铒的TiO薄膜,将代工制造的腔与单个铒离子相连接。单离子寿命测量表明珀塞尔增强高达约500,从而证明了在电信C波段实现可制造的确定性单光子源的途径。

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