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对采用InGaAs/InP材料的p-i-n光电二极管频率响应的理论分析

A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials.

作者信息

Bakalem Nesrine, Aissat Abdelkader, Dupont Samuel, Saidi Faouzi, Dhaou Mohamed Houcine, Vilcot Jean Pierre

机构信息

LATSI Laboratory, University Blida1, Blida 09000, Algeria.

Department of Material Science, Faculty of Material Science, Mathematics and Computer Science, University of Ahmed Draya, Adrar 01000, Algeria.

出版信息

Micromachines (Basel). 2025 Jun 29;16(7):764. doi: 10.3390/mi16070764.

DOI:10.3390/mi16070764
PMID:40731673
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12299745/
Abstract

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGaAs/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E were also studied. Finally, we optimized the cutoff frequency (f), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode.

摘要

本研究聚焦于对采用InxGaAs/InP的p-i-n光电二极管的频率响应特性进行分析。InGaAs/InP可在三种条件下制备：压缩、拉伸应变和晶格匹配。最初，我们对应变、带隙能量（E）和吸收系数进行了计算。然后，我们优化了铟浓度（x）对稳定性、临界厚度、带隙能量和吸收系数的影响。还研究了温度和形变对E的影响。最后，我们通过考虑x、有源层厚度（d）和表面积（S）的影响，优化了截止频率（f）、电容效应和响应频率。对于我们未来的工作，我们打算探索可能影响p-i-n响应的其他参数。在未来的工作中，我们可以在i. InGaAs层中添加透明双层以减少渡越时间，从而开发出超快光电二极管。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/6660e89cb2ad/micromachines-16-00764-g012.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/a24cbdbe8a20/micromachines-16-00764-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/868bde28a349/micromachines-16-00764-g002.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/743a726616d8/micromachines-16-00764-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/cd901345f6cb/micromachines-16-00764-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/20f7f27eca91/micromachines-16-00764-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/ed7a3aca9c2a/micromachines-16-00764-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/7faad9d074c4/micromachines-16-00764-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/9b37b217cde2/micromachines-16-00764-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/20b188da93af/micromachines-16-00764-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/aa8d5c38ce73/micromachines-16-00764-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2285/12299745/6660e89cb2ad/micromachines-16-00764-g012.jpg

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本文引用的文献

1
High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers.具有InGaAsP渐变带隙层的高速宽带铟镓砷/磷化铟光电二极管
Sensors (Basel). 2025 Apr 30;25(9):2841. doi: 10.3390/s25092841.
2
Highly-efficient (>70%) and Wide-spectral (400-1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors.用于未来高分辨率图像传感器的高效（>70%）、宽光谱（400-1700纳米）亚微米厚铟镓砷光电二极管。
Light Sci Appl. 2024 Nov 15;13(1):311. doi: 10.1038/s41377-024-01652-6.