Xu Zheyuan, Fu Jinyue, Jiang Wenlong, Chen Ying, Xu Boyi, Xie Sheng-Yi, Jiang Ying, Pan Anlian
School of Physics and Electronics and College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China.
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, Hunan 410082, China.
Nanoscale. 2025 Aug 15;17(32):18889-18899. doi: 10.1039/d5nr01771h.
Charge transfer (CT) and energy transfer (ET) are prevalent in various van der Waals (vdW) structures. They act on both the donor and acceptor at the nanometer scale to control the carrier behavior and modulate the device performance, which is an important research direction in the field of photonics and optoelectronics. Here, we report that the carrier behavior in a WS/hBN/WS heterostructure is equally modulated by the cavity interference effect in addition to the common CT and ET effects, which results from the cavity-like structure formed by the multilayer material stack. Time-resolved photoluminescence measurements demonstrate that the exciton decay rate undergoes a three-stage change, namely acceleration-deceleration-acceleration, when the hBN thickness changes from 3.0 to 26.1 nanometers. By modeling the carrier dynamics, including cavity interference, CT and ET processes, we perfectly reproduce the decay trend. Understanding the regulation of carrier dynamics by the electrodynamic environment in vdW structures lays the scientific foundation for the development of relevant photoluminescent devices through smart layer engineering.
电荷转移（CT）和能量转移（ET）在各种范德华（vdW）结构中普遍存在。它们在纳米尺度上对供体和受体都起作用，以控制载流子行为并调节器件性能，这是光子学和光电子学领域的一个重要研究方向。在此，我们报告，除了常见的CT和ET效应外，WS/hBN/WS异质结构中的载流子行为还受到腔干涉效应的同等调制，这是由多层材料堆叠形成的类腔结构导致的。时间分辨光致发光测量表明，当hBN厚度从3.0纳米变化到26.1纳米时，激子衰减率经历了加速 - 减速 - 加速三个阶段的变化。通过对包括腔干涉、CT和ET过程在内的载流子动力学进行建模，我们完美地再现了衰减趋势。理解vdW结构中电动力学环境对载流子动力学的调控，为通过智能层工程开发相关光致发光器件奠定了科学基础。
