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通过界面键合实现二烯化石墨烯范德华异质结构的超低紫外光子探测

Ultra-Low Ultraviolet Photon Detection of Diamondene Van der Waals Heterostructure by Interfacial Bonding.

作者信息

Zhen Jiapeng, Guo Silin, Yue Ying, Huang Shuai, Zhang Danping, Shen Kai, Lv Kehong, Huang Qiushi, Qiu Jing, Liu Guanjun

机构信息

College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.

National Key Laboratory of Equipment State Sensing and Smart Support, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.

出版信息

Research (Wash D C). 2025 Aug 4;8:0806. doi: 10.34133/research.0806. eCollection 2025.

DOI:10.34133/research.0806
PMID:40761891
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12320779/
Abstract

With the increasing demand for high sensitivity, low interference, and micro-size of deep ultraviolet spectral information in the field of photoelectric detection, low-dimensional diamond-based ultraviolet photoelectric detection has attracted great interest. However, although the diamond-based material has a high mobility, its lack of free electrons seriously hinders its conductivity and detection ability. Therefore, improving the free electron level of diamond-based materials has become the primary goal for achieving high-performance applications. Here, we demonstrate a diamondene photodetector formed by van der Waals heterostructure bonding, which has a high level of free electrons and is more advantageous for ultraviolet light. The diamondene photodetector realized by this method has a high responsivity of 2.04 A/W and D* higher than 10 Jones, and the external quantum efficiency is as high as . In the detection of imaging applications, ultraviolet imaging with very low photon number is realized, and clear imaging can be achieved only under the light intensity with a photon number of 28. It is of great substantial for the development and theoretical research of ultra-high sensitivity ultraviolet photodetectors in the future.

摘要

随着光电探测领域对深紫外光谱信息高灵敏度、低干扰和微尺寸的需求不断增加,基于低维金刚石的紫外光电探测引起了极大关注。然而,尽管基于金刚石的材料具有高迁移率,但其缺乏自由电子严重阻碍了其导电性和探测能力。因此,提高基于金刚石材料的自由电子水平已成为实现高性能应用的首要目标。在此,我们展示了一种通过范德华异质结构键合形成的二硼化碳光电探测器,其具有高水平的自由电子且对紫外光更具优势。通过这种方法实现的二硼化碳光电探测器具有2.04 A/W的高响应度和高于10琼斯的比 detectivity,外部量子效率高达 。在成像应用检测中,实现了极低光子数的紫外成像,仅在光子数为28的光强下就能实现清晰成像。这对未来超高灵敏度紫外光电探测器的发展和理论研究具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/fe0cae3aeab1/research.0806.fig.004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/5dfd30c0efd0/research.0806.fig.001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/2eeb03a0de04/research.0806.fig.002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/c71aaf3fe88e/research.0806.fig.003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/fe0cae3aeab1/research.0806.fig.004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/5dfd30c0efd0/research.0806.fig.001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/2eeb03a0de04/research.0806.fig.002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/c71aaf3fe88e/research.0806.fig.003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/63a6/12320779/fe0cae3aeab1/research.0806.fig.004.jpg

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