Zhen Jiapeng, Huang Qiushi, Shen Kai, Dong Hongliang, Zhang Shihui, Lv Kehong, Yang Peng, Zhang Yong, Guo Silin, Qiu Jing, Liu Guanjun
College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
Proc Natl Acad Sci U S A. 2024 Jun 4;121(23):e2403726121. doi: 10.1073/pnas.2403726121. Epub 2024 May 28.
The key of heterostructure is the combinations created by stacking various vdW materials, which can modify interlayer coupling and electronic properties, providing exciting opportunities for designer devices. However, this simple stacking does not create chemical bonds, making it difficult to fundamentally alter the electronic structure. Here, we demonstrate that interlayer interactions in heterostructures can be fundamentally controlled using hydrostatic pressure, providing a bonding method to modify electronic structures. By covering graphene with boron nitride and inducing an irreversible phase transition, the conditions for graphene lattice-matching bonding (IMB) were created. We demonstrate that the increased bandgap of graphene under pressure is well maintained in ambient due to the IMB in the interface. Comparison to theoretical modeling emphasizes the process of pressure-induced interfacial bonding, systematically generalizes, and predicts this model. Our results demonstrate that pressure can irreversibly control interlayer bonding, providing opportunities for high-pressure technology in ambient applications and IMB engineering in heterostructures.
异质结构的关键在于通过堆叠各种范德华材料所形成的组合，这可以改变层间耦合和电子特性，为定制器件提供了令人兴奋的机会。然而，这种简单的堆叠并不会形成化学键，使得从根本上改变电子结构变得困难。在这里，我们证明了可以利用静水压力从根本上控制异质结构中的层间相互作用，提供一种修改电子结构的键合方法。通过用氮化硼覆盖石墨烯并诱导不可逆的相变，创造了石墨烯晶格匹配键合（IMB）的条件。我们证明，由于界面中的IMB，石墨烯在压力下增加的带隙在环境条件下得到了很好的维持。与理论模型的比较强调了压力诱导界面键合的过程，系统地概括并预测了该模型。我们的结果表明，压力可以不可逆地控制层间键合，为环境应用中的高压技术和异质结构中的IMB工程提供了机会。
