• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

基于薄膜铌酸锂平台的波导集成PdSe/MoS范德华异质结光电探测器。

Waveguide-integrated PdSe/MoS van der Waals heterojunction photodetector on a thin-film lithium niobate platform.

作者信息

Guo Yidong, Qiu Yang, Zheng Shaonan, Zhong Qize, Dong Yuan, Zhao Xingyan, Hu Ting

出版信息

Appl Opt. 2025 Jun 20;64(18):5115-5120. doi: 10.1364/AO.564072.

DOI:10.1364/AO.564072
PMID:40792806
Abstract

Lithium niobate (LN) photonic devices have been extensively explored due to their distinct material properties. However, the intrinsic wide bandgap and low electrical conductivity of LN prevent its direct application as a photodetection material at telecommunication wavelengths. In this work, a van der Waals heterostructure photodiode composed of a p-type palladium diselenide () layer and an n-type molybdenum disulfide () layer is successfully demonstrated for photodetection at communication wavelengths on a lithium niobate on insulator (LNOI) platform. The LN waveguide-integrated / photodetector exhibits an ultralow dark current of 0.5 nA, a high on/off current ratio of 180, and a responsivity of 0.77 mA/W at zero bias, highlighting its potential for self-powered photodetection. At -1 bias, the device maintains a dark current of only 23 nA while achieving a responsivity of 1.09 mA/W. An excellent linear photoresponse is observed over a wide power range (0.06-92.24 µW) under both zero- and reverse-bias conditions. These results demonstrate the potential of monolithically integrated LNOI photodetectors for high-performance optical communication and on-chip biochemical sensing applications.

摘要

铌酸锂(LN)光子器件因其独特的材料特性而得到了广泛研究。然而,铌酸锂的固有宽带隙和低电导率阻碍了其在电信波长下直接用作光电探测材料。在这项工作中,成功展示了一种由p型二硒化钯()层和n型二硫化钼()层组成的范德华异质结构光电二极管,用于在绝缘体上铌酸锂(LNOI)平台上进行通信波长的光电探测。集成了LN波导的/光电探测器在零偏压下表现出0.5 nA的超低暗电流、180的高开/关电流比和0.77 mA/W的响应度,突出了其自供电光电探测的潜力。在-1偏压下,该器件仅保持23 nA的暗电流,同时实现1.09 mA/W的响应度。在零偏压和反向偏压条件下,在很宽的功率范围(0.06 - 92.24 µW)内都观察到了出色的线性光响应。这些结果证明了单片集成LNOI光电探测器在高性能光通信和片上生化传感应用中的潜力。

相似文献

1
Waveguide-integrated PdSe/MoS van der Waals heterojunction photodetector on a thin-film lithium niobate platform.基于薄膜铌酸锂平台的波导集成PdSe/MoS范德华异质结光电探测器。
Appl Opt. 2025 Jun 20;64(18):5115-5120. doi: 10.1364/AO.564072.
2
Waveguide-integrated van der Waals heterostructure photodetector on a lithium niobate on insulator platform.基于绝缘体上铌酸锂平台的波导集成范德华异质结构光电探测器。
Opt Lett. 2024 Jun 1;49(11):3162-3165. doi: 10.1364/OL.522343.
3
Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity.具有低暗电流和高响应度的芯片集成范德华PN异质结光电探测器。
Light Sci Appl. 2022 Apr 20;11(1):101. doi: 10.1038/s41377-022-00784-x.
4
Solution-Processable Van Der Waals Heterojunctions on Silicon for Self-Powered Photodetectors with High Responsivity and Detectivity.用于具有高响应度和探测率的自供电光电探测器的硅基溶液可加工范德华异质结
Adv Sci (Weinh). 2025 Jun;12(23):e2500027. doi: 10.1002/advs.202500027. Epub 2025 Mar 28.
5
Monolayer Graphene-MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector.用于高响应性栅极可调近红外敏感宽带快速光电探测器的单层石墨烯-MoSSe范德华异质结构
ACS Appl Mater Interfaces. 2023 Mar 7. doi: 10.1021/acsami.2c20707.
6
Wafer-Scale Vertical 1D GaN Nanorods/2D MoS/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors.用于压光电子效应增强型自供电柔性光电探测器的晶圆级垂直一维氮化镓纳米棒/二维二硫化钼/聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐
Nanomicro Lett. 2024 Nov 5;17(1):56. doi: 10.1007/s40820-024-01553-8.
7
Photodetection Mechanisms and Ultraviolet-Visible Imaging Characteristics of High-Detectivity Broadband Metal-Semiconductor-Metal Photodetector Arrays on Wafer-Scale Monolayer MoS.晶圆级单层MoS上高探测率宽带金属-半导体-金属光电探测器阵列的光探测机制及紫外-可见成像特性
ACS Appl Mater Interfaces. 2025 Jun 18;17(24):35732-35742. doi: 10.1021/acsami.5c04602. Epub 2025 Jun 6.
8
Environmental-Friendly AgS QD-Multilayer MoSe van Der Waals Heterostructure for High-Performance Broadband Photodetection.用于高性能宽带光探测的环境友好型硫化银量子点-多层二硒化钼范德华异质结构
ACS Appl Mater Interfaces. 2024 Apr 10. doi: 10.1021/acsami.4c00129.
9
Self-Driven Gr/WSe/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts.基于非对称肖特基范德华接触的高性能自驱动Gr/WSe₂/Gr光电探测器
ACS Appl Mater Interfaces. 2023 Dec 13;15(49):57868-57878. doi: 10.1021/acsami.3c14331. Epub 2023 Nov 28.
10
On-chip graphene photodetectors with a nonvolatile p-i-n homojunction.具有非易失性p-i-n同质结的片上石墨烯光电探测器。
Light Sci Appl. 2025 Jul 7;14(1):238. doi: 10.1038/s41377-025-01832-y.