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用于局部电子热管理的小型化镁铋基热电冷却器。

Miniaturized MgBi-based thermoelectric cooler for localized electronic thermal management.

作者信息

Lin Chenhao, Ma Xiaojing, Liang Kun, Xu Yao, Yang Hengyu, Wang Jian, Ye Sheng, Qiu Jiamin, Song Linlin, Zhi Shizhen, Chen Jiang, Zhao Peng, Duan Sichen, Wu Zuoxu, Yin Li, Wu Longzhi, Jiang Feng, Tang Zunqian, Cao Feng, Zhang Qian, Mao Jun

机构信息

School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology (Shenzhen), Shenzhen, P.R. China.

School of Science, and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, P.R. China.

出版信息

Nat Commun. 2025 Aug 20;16(1):7779. doi: 10.1038/s41467-025-63174-y.

Abstract

Miniaturized thermoelectric coolers, known for their high cooling power density and rapid thermal response, hold promise for localized thermal management. While traditional thermoelectric coolers have primarily relied on BiTe alloys, the recent development of n-type MgBi-based materials presents a compelling alternative, offering enhanced cost-effectiveness and environmental sustainability. In this study, we have designed and fabricated a MgBi-based miniscale thermoelectric cooler. At the hot-side temperature of 300 K, the cooler achieves a maximum cooling temperature difference of ~59.0 K, a cooling power density of ~5.7 W cm, and a cooling speed of 65 K s, which surpasses the state-of-the-art MgBi-based devices. In addition, the miniaturized MgBi-based cooler maintains its cooling performance after cyclic electrical current density between 1 A mm and 3 A mm for approximately 3,000 cycles. Notably, this miniscale cooler has been applied to provide localized cooling for the central processing unit in a microcontroller. Our findings highlight the potential of MgBi-based miniscale coolers, offering new possibilities for localized thermal management in electronic devices.

摘要

微型热电冷却器以其高冷却功率密度和快速热响应而闻名,有望实现局部热管理。虽然传统的热电冷却器主要依赖于铋碲合金,但最近基于n型MgBi的材料的发展提供了一个引人注目的替代方案,具有更高的成本效益和环境可持续性。在本研究中,我们设计并制造了一种基于MgBi的微型热电冷却器。在300 K的热侧温度下,该冷却器实现了约59.0 K的最大冷却温差、约5.7 W/cm的冷却功率密度和65 K/s的冷却速度,超过了目前最先进的基于MgBi的器件。此外,基于MgBi的微型冷却器在1 A/mm至3 A/mm的循环电流密度下经过约3000次循环后仍能保持其冷却性能。值得注意的是,这种微型冷却器已被应用于为微控制器中的中央处理器提供局部冷却。我们的研究结果突出了基于MgBi的微型冷却器的潜力,为电子设备中的局部热管理提供了新的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/132e/12368177/c61a298e09b4/41467_2025_63174_Fig1_HTML.jpg

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