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通过电镀超细晶粒（UFG）铜实现低温低压铜与铜直接键合的晶界运动

Grain boundary motions of low temperature and low pressure copper to copper direct bonding by electroplating ultra-fine-grain (UFG) Cu.

作者信息

Lee Yun-Fong, Chiu Chih-Wen, Chiu Chin-Yen, Huang Yu-Chen, Lo Mei-Hsin, Yang Liu-Hsin-Chen, Cheng Ting-Yi, Yu Zhong-Yen, Hsu Chih-En, Lin Kai-Chi, Chen Po-Yu, Huang Wei-Cheih, Chang Jui-Sheng, Pan Shao-An, Su Yi-Cheng, Lin Chin-Li, Hsieh Hang-Chen, Lin Chia-Hua, Liu Cheng-Yi

机构信息

Department of Chemical and Materials Engineering, National Central University, No. 300, Zhongda Rd., Zhongli District, Taoyuan City, 32001, Taiwan, ROC.

Department of Chemical and Materials Engineering, Tunghai University, No. 1727, Sec. 4, Taiwan Boulevard, Xitun District, Taichung, 407224, Taiwan, ROC.

出版信息

Sci Rep. 2025 Aug 22;15(1):30978. doi: 10.1038/s41598-025-17058-2.

DOI:10.1038/s41598-025-17058-2
PMID:40847129
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12373834/
Abstract

Cu-Cu direct bonding using electroplated ultrafine-grain Cu (107.24 nm) was studied in air at 110-150 °C. Unstable grain boundaries enabled ultrafast grain growth across the bonding interface, analyzed via coincidence site lattice (CSL) boundaries using EBSD. Above 125 °C, the Σ3 boundary length exceeded 40%, while below 120 °C it rapidly declined, transforming into Σ27a, indicating a critical transition dominated by the {115} plane. A temperature-time-dependent grain growth model was developed, incorporating CSL effects. Simulations showed grain evolution and timing of CSL boundary formation, with transition times from 316 to 190 s as temperature increased.

摘要

在110-150°C的空气中研究了使用电镀超细晶粒铜（107.24纳米）进行的铜-铜直接键合。不稳定的晶界使得能够在键合界面上实现超快的晶粒生长，通过电子背散射衍射（EBSD）利用重合位置点阵（CSL）边界进行分析。在125°C以上，Σ3边界长度超过40%，而在120°C以下则迅速下降，转变为Σ27a，表明由{115}平面主导的临界转变。建立了一个考虑CSL效应的温度-时间相关晶粒生长模型。模拟显示了晶粒演化和CSL边界形成的时间，随着温度升高，转变时间从316秒到190秒。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/ea35beadd784/41598_2025_17058_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/e654bae7000b/41598_2025_17058_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/d2600a7685e9/41598_2025_17058_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/c0f16f917283/41598_2025_17058_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/bea6f3e41f1c/41598_2025_17058_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/de820db7cb2e/41598_2025_17058_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/1b1771691c8f/41598_2025_17058_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/859389b24d21/41598_2025_17058_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/3a7883f4f924/41598_2025_17058_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/ea35beadd784/41598_2025_17058_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/e654bae7000b/41598_2025_17058_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/d2600a7685e9/41598_2025_17058_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/c0f16f917283/41598_2025_17058_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/bea6f3e41f1c/41598_2025_17058_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/de820db7cb2e/41598_2025_17058_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/1b1771691c8f/41598_2025_17058_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/859389b24d21/41598_2025_17058_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/3a7883f4f924/41598_2025_17058_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/29e6/12373834/ea35beadd784/41598_2025_17058_Fig9_HTML.jpg

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2
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3
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