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基于CrI/WTe的异质结构中稳健的高迁移率半金属界面态

Robust High Mobility Half-Metallic Interface State in CrI/WTe Based Heterostructures.

作者信息

Pandey Nivedita, Grånäs Oscar

机构信息

Department of Physics and Astronomy, Uppsala University, SE-751 20 Uppsala, Sweden.

出版信息

ACS Appl Mater Interfaces. 2025 Sep 10;17(36):51448-51456. doi: 10.1021/acsami.5c10764. Epub 2025 Aug 26.

Abstract

We report a robust half-metallic interface state in the CrI/2H-WTe van der Waals (vdW) heterostructure, exhibiting 100% spin polarization and an extraordinary magnetoresistance exceeding 1 × 10%. These unique properties position the CrI/2H-WTe configuration as an exceptional candidate for applications in data storage, spintronics, and spin caloritronics. By designing a device incorporating CrO electrodes, we model charge and spin transport in this heterostructure and analyze the thermal properties under parallel (PM) and antiparallel (APM) magnetization states. Using density functional theory (DFT) and nonequilibrium Green's function (NEGF) methods, we explore how variations in temperature between CrO electrodes impact spin-polarized currents and demonstrate nearly perfect spin filtration efficiency at low temperatures across both the 1' and 2H phases of WTe. The device also shows high thermal magnetoresistance (MR), further enhancing its applicability for spin-caloritronic functions. Transmission spectra for PM and APM states reveal temperature-dependent spin transport, reinforcing the heterostructure's spin filtering effectiveness. This study represents the first detailed investigation of a heterostructure device with CrI and WTe phases and CrO electrodes, highlighting the superior spin filtration and MR capabilities of the CrI/2H-WTe interface. The robust half-metallic state and remarkable spin filtering efficiency underscore the potential of this structure for developing advanced thermally controlled spintronic and spin-caloritronic devices.

摘要

我们报道了CrI/2H-WTe范德华(vdW)异质结构中一种稳健的半金属界面态,其表现出100%的自旋极化和超过1×10%的异常磁电阻。这些独特性质使CrI/2H-WTe结构成为数据存储、自旋电子学和自旋热电子学应用的极佳候选材料。通过设计一种包含CrO电极的器件,我们对该异质结构中的电荷和自旋输运进行建模,并分析平行(PM)和反平行(APM)磁化状态下的热性质。使用密度泛函理论(DFT)和非平衡格林函数(NEGF)方法,我们探究了CrO电极之间温度变化如何影响自旋极化电流,并证明在低温下WTe的1'和2H相都具有近乎完美的自旋过滤效率。该器件还表现出高热磁电阻(MR),进一步增强了其在自旋热电子学功能方面的适用性。PM和APM状态的透射光谱揭示了与温度相关的自旋输运,强化了异质结构的自旋过滤有效性。这项研究首次详细研究了具有CrI和WTe相以及CrO电极的异质结构器件,突出了CrI/2H-WTe界面卓越的自旋过滤和MR能力。稳健的半金属态和显著的自旋过滤效率凸显了该结构在开发先进的热控自旋电子学和自旋热电子学器件方面的潜力。

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