Li Haiou, Shen Jiamin, Zhuo Zhihao, Zhang Fabi, Liu Xingpeng, Liao Qing
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Nanomaterials (Basel). 2025 Aug 9;15(16):1218. doi: 10.3390/nano15161218.
Carbon nanotube field-effect transistors (CNT FETs) are considered strong candidates for next-generation flexible electronics due to their excellent carrier mobility and mechanical flexibility. However, the fabrication of CNT FETs on conventional flexible substrates such as PI or PET is often limited by surface roughness, chemical incompatibility, and poor mechanical robustness, resulting in degraded device performance. In this study, we report the fabrication of buried-gate CNT FETs incorporating HfZrO as the gate dielectric on mica substrates, which offer high surface flatness, low defect density, and superior mechanical durability. The fabricated devices exhibit outstanding electrical characteristics, including a field-effect mobility of 38.4 cm/V·s, a subthreshold swing of 93 mV/dec, and a transconductance of 14.2 μS. These results demonstrate the excellent mechanical stability and reliable electrical performance of the proposed devices under bending stress, highlighting their suitability for mechanically demanding flexible electronics applications.
碳纳米管场效应晶体管（CNT FETs）因其出色的载流子迁移率和机械柔韧性，被视为下一代柔性电子产品的有力候选者。然而，在诸如PI或PET等传统柔性衬底上制造CNT FETs，往往受到表面粗糙度、化学不相容性和较差的机械坚固性的限制，导致器件性能下降。在本研究中，我们报告了在云母衬底上制造的以HfZrO作为栅极电介质的埋栅CNT FETs，云母衬底具有高表面平整度、低缺陷密度和卓越的机械耐久性。所制造的器件展现出出色的电学特性，包括38.4 cm²/V·s的场效应迁移率、93 mV/dec的亚阈值摆幅和14.2 μS的跨导。这些结果证明了所提出器件在弯曲应力下具有出色的机械稳定性和可靠的电学性能，突出了它们适用于对机械性能要求苛刻的柔性电子应用。
