Wang Bing, Liu Zhaochao, He Yuyu, Yang Mingjian, Sun Xiaolei, Luo Feng
Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China.
ACS Appl Mater Interfaces. 2025 Jul 30;17(30):43208-43216. doi: 10.1021/acsami.5c08483. Epub 2025 Jul 16.
Two-dimensional semiconductors, particularly atomically thin molybdenum disulfide (MoS), show great promise for flexible electronics due to their exceptional mechanical, electronic, and optical properties. In recent years, MoS has attracted increasing attention, but the direct deposition of high-κ dielectrics on MoS is challenging due to the absence of dangling bonds. In this study, we propose a novel dielectric integration strategy that eliminates the need for stripping and solution assistance. In this approach, dielectrics are predeposited onto a flexible substrate and mechanically pressed onto the MoS surface to create a clean dielectric-semiconductor interface. Additionally, top electrodes and high-κ dielectrics can be predeposited together on the flexible substrate and then transferred to the MoS surface, ensuring high-quality dielectric-semiconductor and dielectric-electrode interfaces. This method enables the formation of perfect interfaces free from damage, folds, or contamination, as the thin film does not require peeling or solution assistance. A capacitance density of 0.55 μF/cm was achieved using a 10 nm AlO dielectric in a metal-insulator-metal device. Our MoS top-gated transistors demonstrated a switching ratio greater than 10 and maintained electrical stability for over 100 cycles. Finally, we successfully fabricated scalable top-gated MoS arrays on a flexible mica substrate, confirming the potential of van der Waals integration in flexible electronics.
二维半导体，特别是原子级厚度的二硫化钼（MoS），因其卓越的机械、电子和光学性能，在柔性电子学领域展现出巨大潜力。近年来，MoS受到了越来越多的关注，但由于不存在悬空键，在MoS上直接沉积高κ电介质具有挑战性。在本研究中，我们提出了一种新颖的电介质集成策略，该策略无需剥离和溶液辅助。在这种方法中，电介质预先沉积在柔性基板上，然后机械压在MoS表面，以创建一个清洁的电介质 - 半导体界面。此外，顶部电极和高κ电介质可以一起预先沉积在柔性基板上，然后转移到MoS表面，确保高质量的电介质 - 半导体和电介质 - 电极界面。这种方法能够形成完美的界面，无损伤、褶皱或污染，因为薄膜不需要剥离或溶液辅助。在金属 - 绝缘体 - 金属器件中使用10 nm的AlO电介质实现了0.55 μF/cm的电容密度。我们的MoS顶栅晶体管的开关比大于10，并在超过100个周期内保持电稳定性。最后，我们在柔性云母基板上成功制造了可扩展的顶栅MoS阵列，证实了范德华集成在柔性电子学中的潜力。
