Zhao Kun, Ren Fangying, Yan Yige, Wang Jiarong, Liu Xiaojing, Huang Meilin, He Dawei, Wang Yongsheng, Zhang Xiaoxian
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
School of Management, Hebei University, Baoding 071002, Hebei China.
Langmuir. 2025 Sep 9;41(35):23529-23537. doi: 10.1021/acs.langmuir.5c02589. Epub 2025 Aug 27.
Two-dimensional materials possess exceptional optoelectronic properties, including high carrier mobility and tunable bandgaps, making them highly suitable for various electronic and optoelectronic applications. While inorganic 2D materials exhibit ultrafast and efficient interlayer charge transport, they suffer from limited light absorption capabilities. In contrast, organic semiconductors offer broad spectral absorption but are constrained by their inherently low charge carrier mobility. Conjugated polymers such as poly(3-hexylthiophene) (P3HT) exhibit excellent mechanical flexibility, solution processability, and film-forming capabilities, enabling the scalable fabrication of high-performance flexible optoelectronic devices. To overcome these limitations, we successfully developed a type-II MoSe/P3HT heterostructure (HS) that combines the complementary advantages of both material systems. Steady-state absorption measurements reveal that the MoSe/P3HT HS exhibits both broader spectral coverage and stronger absorption intensity compared with its individual components. Photoluminescence (PL) spectroscopy studies demonstrate significant PL quenching in the HS, suggesting efficient interfacial charge transfer between the constituent layers. Transient absorption spectroscopic results reveal efficient interfacial hole transfer from MoSe to P3HT with a time scale of 19.9 ps. Notably, the MoSe/P3HT heterostructure exhibits an exceptionally slow charge recombination lifetime of 901.4 ps, significantly surpassing that of inorganic-inorganic van der Waals heterostructures. Organic-inorganic hybrids demonstrate enhanced light absorption, ultrafast charge transfer, and prolonged carrier lifetimes, rendering them highly promising for high-efficiency photovoltaics, broadband photodetectors, and other advanced optoelectronic applications in the future.
二维材料具有优异的光电特性，包括高载流子迁移率和可调节的带隙，这使得它们非常适合各种电子和光电子应用。虽然无机二维材料表现出超快且高效的层间电荷传输，但它们的光吸收能力有限。相比之下，有机半导体具有宽广的光谱吸收范围，但受其固有低载流子迁移率的限制。共轭聚合物如聚（3-己基噻吩）（P3HT）具有出色的机械柔韧性、溶液可加工性和成膜能力，能够实现高性能柔性光电器件的可扩展制造。为了克服这些限制，我们成功开发了一种II型MoSe/P3HT异质结构（HS），它结合了两种材料体系的互补优势。稳态吸收测量表明，与单个组分相比，MoSe/P3HT HS具有更宽的光谱覆盖范围和更强吸收强度。光致发光（PL）光谱研究表明，该HS中存在显著的PL猝灭，这表明在组成层之间存在有效的界面电荷转移。瞬态吸收光谱结果表明，从MoSe到P3HT存在高效的界面空穴转移，时间尺度为19.9 ps。值得注意的是，MoSe/P3HT异质结构表现出901.4 ps的异常缓慢的电荷复合寿命，显著超过无机-无机范德华异质结构。有机-无机杂化物表现出增强的光吸收、超快电荷转移和延长的载流子寿命，这使其在未来的高效光伏、宽带光电探测器和其他先进光电子应用方面极具前景。
