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一种基于多尺度模拟驱动方法的聚合物中碳化硅晶体的高效制造方法。

An Efficient Manufacturing Method for Silicon Carbide Crystals in Polymers Based on a Multiscale Simulation-Driven Approach.

作者信息

Wang Jia, Jia Caiqin, Sun Heming, Tian Ye

机构信息

School of Semiconductor and Physics, North University of China, Taiyuan 030051, China.

School of Data Science and Technology, North University of China, Taiyuan 030051, China.

出版信息

Micromachines (Basel). 2025 Aug 18;16(8):946. doi: 10.3390/mi16080946.

Abstract

The pyrolysis of polydimethylsiloxane (PDMS) for silicon carbide (SiC) fabrication endows precursor materials with exceptional microstructural controllability and complex geometry retention capability, rendering it widely applicable in flexible electronic packaging and microscale complex-structured heat exchangers. Nevertheless, the widespread adoption of pyrolytic SiC has been constrained by the low yield and process complexity inherent to conventional pyrolysis methods. In response, we developed a multiscale simulation framework integrating macroscopic thermal distribution with microscopic chemical reaction kinetics. The secondary pyrolysis protocol, designed based on simulation results, enhanced the SiC yield from <25% (conventional methods) to 79.2% while simultaneously improving crystalline quality. This simulation framework not only provides theoretical guidance for optimizing laser direct writing pyrolysis, but the proposed secondary ablation strategy also significantly expands the application potential of SiC-PDMS systems in device fabrication.

摘要

用于制造碳化硅(SiC)的聚二甲基硅氧烷(PDMS)热解赋予前驱体材料出色的微观结构可控性和复杂几何形状保持能力,使其在柔性电子封装和微尺度复杂结构热交换器中得到广泛应用。然而,传统热解方法固有的低产率和工艺复杂性限制了热解SiC的广泛应用。作为回应,我们开发了一个将宏观热分布与微观化学反应动力学相结合的多尺度模拟框架。基于模拟结果设计的二次热解方案将SiC产率从<25%(传统方法)提高到79.2%,同时提高了晶体质量。该模拟框架不仅为优化激光直写热解提供了理论指导,而且所提出的二次烧蚀策略也显著扩展了SiC-PDMS系统在器件制造中的应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49b6/12388066/6a8f8795e0f6/micromachines-16-00946-g002.jpg

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