Li Hongmei, Wang Hongwei, Li Yuxin, Lu Xiwen, Li Lin, Yan Yinzhou, Guo Wei
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China.
Discov Nano. 2025 Jul 16;20(1):116. doi: 10.1186/s11671-025-04309-4.
Wide-bandgap semiconductor materials, exemplified by silicon carbide (SiC), have emerged as pivotal materials in semiconductor devices due to their exceptional chemical stability, high electron mobility, and thermal stability. With the rapid development of microelectronic devices and integrated optical circuits, the demand for high-yield and high-quality processing of SiC wafer has intensified. Traditional SiC wafer processing technologies suffer from low efficiency and high material loss, making it difficult to meet industrial demands. Therefore, the development of efficient, low-damage processing techniques has become a pressing issue in the SiC wafer processing field. Ultrashort pulsed laser processing, with its advantages of contact free processing, no mechanical stress, and small heat-affected zones, has garnered significant attention in SiC wafer processing in recent years. By generating a modified layer within the material, laser processing plays a crucial role in wafer fabrication. However, the key challenge lies in precisely controlling the thickness of the modified layer down to the micro-nano scale to minimize material loss. This review systematically discusses the interaction mechanisms and modification processes of laser with wide-bandgap semiconductor SiC materials. It focuses on the core issue in laser modification technology, where nonlinear effects make it difficult to precisely control the modification layer depth, thereby affecting both modification quality and processing efficiency. To address this, the paper summarizes the differences in modification mechanisms with lasers of varying pulse durations and proposes a multi-strategy solution to improve modification quality and processing efficiency through pulse control and synergistic optimization of process parameters. Additionally, this review provides a comprehensive overview of advanced SiC wafer detachment processes, including cold cracking stripping, chemically assisted stripping, ultrasonic stripping, and multi-laser composite stripping, and identifies the primary challenges and future directions in the field of SiC wafer processing.
以碳化硅（SiC）为代表的宽带隙半导体材料，因其卓越的化学稳定性、高电子迁移率和热稳定性，已成为半导体器件中的关键材料。随着微电子器件和集成光学电路的迅速发展，对SiC晶圆进行高产率、高质量加工的需求日益强烈。传统的SiC晶圆加工技术效率低下且材料损耗高，难以满足工业需求。因此，开发高效、低损伤的加工技术已成为SiC晶圆加工领域的紧迫问题。超短脉冲激光加工具有非接触加工、无机械应力和热影响区小等优点，近年来在SiC晶圆加工中受到了广泛关注。通过在材料内部产生改性层，激光加工在晶圆制造中起着至关重要的作用。然而，关键挑战在于将改性层的厚度精确控制到微纳尺度，以最大限度地减少材料损耗。本文系统地讨论了激光与宽带隙半导体SiC材料的相互作用机制和改性过程。它聚焦于激光改性技术中的核心问题，即非线性效应使得难以精确控制改性层深度，从而影响改性质量和加工效率。为解决这一问题，本文总结了不同脉冲持续时间的激光在改性机制上的差异，并提出了一种多策略解决方案，通过脉冲控制和工艺参数的协同优化来提高改性质量和加工效率。此外，本文全面概述了先进的SiC晶圆剥离工艺，包括冷裂剥离、化学辅助剥离、超声剥离和多激光复合剥离，并确定了SiC晶圆加工领域的主要挑战和未来发展方向。
