Zhou Chu, Deng Jingjing, Zhang Jielian, Xiong Jingxian, Yang Yingxin, Wu Nanshou, Li Jingbo, Li Sina
College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China.
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, PR China.
J Phys Chem Lett. 2025 Sep 4;16(35):9202-9209. doi: 10.1021/acs.jpclett.5c02320. Epub 2025 Aug 28.
The rapid advancements in optoelectronics and their widespread applications have spurred the development of high-performance photodetectors. This study presents a dual-van der Waals heterostructure photodetector, composed of WSe, AsP, and WS. It demonstrates outstanding polarization-sensitive light detection without external bias, with a sensitivity of 487 mA/W, a detection capability of 6.09 × 10 Jones, and an external quantum efficiency (EQE) of 95% at 635 nm, along with rise/fall times of 18-36 ms. The device also exhibits notable anisotropic polarization sensitivity (4.8 at 405 nm). With its broad spectral coverage (400-1100 nm), fast response, and high sensitivity, this photodetector shows significant promise for imaging applications. The development of anisotropic van der Waals heterojunctions provides a key reference for the design of high-performance, self-powered polarization photodetectors.
光电子学的快速发展及其广泛应用推动了高性能光电探测器的发展。本研究展示了一种由WSe、AsP和WS组成的双范德华异质结构光电探测器。它在无外部偏置的情况下表现出出色的偏振敏感光探测性能，灵敏度为487 mA/W，探测能力为6.09×10琼斯，在635 nm处的外量子效率（EQE）为95%，上升/下降时间为18 - 36 ms。该器件还表现出显著的各向异性偏振灵敏度（在405 nm处为4.8）。凭借其宽光谱覆盖范围（400 - 1100 nm）、快速响应和高灵敏度，这种光电探测器在成像应用中显示出巨大的潜力。各向异性范德华异质结的发展为高性能、自供电偏振光电探测器的设计提供了关键参考。
