一种具有结晶和氧化调制锡铅钙钛矿的单片集成近红外成像仪。

A monolithically integrated near-infrared imager with crystallization- and oxidation-modulated tin-lead perovskites.

作者信息

Yang Zhichun, Liu Jingjing, Bao Haotian, Liu Zonghao, Wang Zaiwei, Li Xiangdong, Chen Zhihao, Zhang Guofeng, Chen Ruiyun, Hu Jianyong, Han Shuangping, Chen Wei, Qin Chengbing, Xiao Liantuan, Jia Suotang

机构信息

State Key Laboratory of Quantum Optics Technologies and Devices, Institute of Laser Spectroscopy, Shanxi University, 030006, Taiyuan, China.

Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, China.

出版信息

Light Sci Appl. 2025 Sep 4;14(1):304. doi: 10.1038/s41377-025-01987-8.

DOI:10.1038/s41377-025-01987-8

PMID:40908289

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12411627/

Abstract

The fast crystallization and facile oxidation of Sn of tin-lead (Sn-Pb) perovskites are the biggest challenges for their applications in high-performance near-infrared (NIR) photodetectors and imagers. Here, we introduce a multifunctional diphenyl sulfoxide (DPSO) molecule into perovskite precursor ink to response these issues by revealing its strong binding interactions with the precursor species. The regulated perovskite film exhibits a dense morphology, reduced defect density and prolonged carrier diffusion length. The manufactured self-powered photodetector realizes a spectral response of 300-1100 nm, dark current density of 4.7 × 10 mA cm, peak responsivity of 0.49 A W and specific detectivity of 1.20 × 10 Jones in NIR region (780-1100 nm), -3 dB bandwidth of 11.4 MHz, linear dynamic range of 174 dB, and ultrafast rise/fall time of 14.2/17.1 ns, respectively. We demonstrate a 64 × 64 NIR imager with an impressive spatial resolution of 1.32 lp mm by monolithically integrating the photodetector with a commercial thin-film transistor readout circuit.

摘要

锡铅（Sn-Pb）钙钛矿的快速结晶和锡的易氧化是其在高性能近红外（NIR）光电探测器和成像器中应用面临的最大挑战。在此，我们将多功能二苯基亚砜（DPSO）分子引入钙钛矿前驱体油墨中，通过揭示其与前驱体物种的强结合相互作用来应对这些问题。调控后的钙钛矿薄膜呈现出致密的形态、降低的缺陷密度和延长的载流子扩散长度。制造的自供电光电探测器在近红外区域（780 - 1100 nm）实现了300 - 1100 nm的光谱响应、4.7×10⁻³ mA cm⁻²的暗电流密度、0.49 A W⁻¹的峰值响应度和1.20×10¹² Jones的比探测率，-3 dB带宽为11.4 MHz，线性动态范围为174 dB，超快上升/下降时间分别为14.2/17.1 ns。通过将光电探测器与商用薄膜晶体管读出电路单片集成，我们展示了一款具有1.32 lp mm令人印象深刻空间分辨率的64×64近红外成像器。