Liu Tianhua, Wang Junfang, Liu Yongsi, Min Liangliang, Wang Lixia, Yuan Ziquan, Sun Haoxuan, Huang Le, Li Liang, Meng Xiangyue
School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China.
Adv Mater. 2024 Jun;36(24):e2400090. doi: 10.1002/adma.202400090. Epub 2024 Mar 8.
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH)SnI (FASnI) perovskite films to inhibit Sn oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn. Consequently, FASnI-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI-CNI exhibits low dark current (1.04 × 10 A cm), high detectivity (2.2 × 10 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI-CNI photodetector. In addition, flexible photodetectors based on FASnI-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
具有优异光电性能的低毒性卤化锡钙钛矿是光探测领域很有前景的候选材料。然而,由于无法控制的Sn氧化,卤化锡钙钛矿光电探测器一直存在高暗电流问题。在此,将2-氰基乙铵碘化物(CNI)引入CH(NH)SnI(FASnI)钙钛矿薄膜中,通过氰基(C≡N)与Sn之间的强配位相互作用来抑制Sn氧化。因此,FASnI-CNI薄膜表现出减少的非辐射复合和更低的陷阱密度。基于FASnI-CNI的自供电光电探测器表现出低暗电流(1.04×10 A cm)、高探测率(在785 nm处为2.2×10 Jones)、快速响应速度(2.62 µs)和良好的稳定性。机理研究表明,热发射和产生的载流子所需的活化能增加,导致FASnI-CNI光电探测器中的暗电流降低。此外,基于FASnI-CNI的柔性光电探测器具有高探测率和快速响应速度,被用于可穿戴电子设备中,在弱光和零偏置条件下监测人体心率。最后,FASnI-CNI钙钛矿光电探测器与一个32×32薄膜晶体管背板集成,能够以高对比度和零功耗对超弱光(170 nW cm)进行实时成像,展示了其在图像传感器应用中的巨大潜力。