Li Zhisong, Zhang Zhenwei, Liu Keke, Zhang Haojie, Kong Yong, Ye Xin, Tang Xin
The Unit of College of Machine, Shanghai Dianji University, Shanghai, China.
School of Electric and Electrical Engineering, Shanghai University of Engineering Science, Shanghai, China.
iScience. 2025 Aug 7;28(9):113322. doi: 10.1016/j.isci.2025.113322. eCollection 2025 Sep 19.
Wafer thickness is a critical parameter in semiconductor manufacturing, influencing production costs, and chip performance. Traditional measurement methods using clamping devices often introduce errors due to uneven positioning or unstable clamping. This study enhances the dual-probe chromatic confocal system by incorporating a diffractive optical element that splits white light into three beams, with spectrometer wave peak counts detecting wafer tilt. A tilt correction algorithm was developed and tested. Experiments showed that with a 10 μm probe offset and 3° tilt, the measured thickness was 0.52 μm greater than in the parallel state. The algorithm significantly reduced tilt errors, improving thickness measurements by 50.2%. This advancement addresses limitations of traditional methods, offering a more precise and reliable approach for wafer thickness measurement, which is essential for optimizing semiconductor production processes.
晶圆厚度是半导体制造中的一个关键参数，会影响生产成本和芯片性能。使用夹紧装置的传统测量方法由于定位不均匀或夹紧不稳定，常常会引入误差。本研究通过集成一个衍射光学元件来增强双探针彩色共焦系统，该元件将白光分成三束光，利用光谱仪波峰计数来检测晶圆倾斜。开发并测试了一种倾斜校正算法。实验表明，当探针偏移10μm且倾斜3°时，测量厚度比平行状态下大0.52μm。该算法显著降低了倾斜误差，将厚度测量精度提高了50.2%。这一进展解决了传统方法的局限性，为晶圆厚度测量提供了一种更精确、可靠的方法，这对于优化半导体生产工艺至关重要。
