Fan Diqing, Liu Jianyu, Zhang Shuo, Liu Xintian
School of Mechanical and Automotive Engineering, Shanghai University of Engineering Science, Shanghai, China.
Sci Prog. 2025 Jul-Sep;108(3):368504251377216. doi: 10.1177/00368504251377216. Epub 2025 Sep 8.
To address the growing demand for temperature control precision and uniformity in wafer processing, a specialized electrostatic chuck temperature control system based on thermal control coatings is proposed, aiming to enhance thermal management robustness and homogeneity. This study employs a zoned control methodology using metal-oxide conductive coatings on silicon carbide wafer heating plates. A quadrant-based thermal control coating model was established, and finite element analysis was conducted to compare temperature distribution characteristics across three geometric configurations: sectorial, spiral, and zoned designs. The zoned structure was identified as the optimal configuration. The heating mechanism and heat transfer principles of the specialized chuck were analyzed, encompassing thermal conduction, convection, and radiation, with key factors influencing temperature distribution elucidated. Finite element simulation was utilized to optimize the thermal control system design, incorporating structured meshing to ensure computational accuracy. Experimental results demonstrate that precise regulation of coating current variations achieves maximum temperature difference control below 0.2°C and surface temperature uniformity stabilized at approximately 0.05°C, validating the efficacy of the methodology. These findings establish a robust theoretical foundation for further optimization of temperature control systems in semiconductor thermal management applications.
为满足晶圆加工中对温度控制精度和均匀性日益增长的需求,提出了一种基于热控涂层的专用静电吸盘温度控制系统,旨在增强热管理的稳健性和均匀性。本研究采用分区控制方法,在碳化硅晶圆加热板上使用金属氧化物导电涂层。建立了基于象限的热控涂层模型,并进行了有限元分析,以比较扇形、螺旋形和分区设计这三种几何构型的温度分布特性。分区结构被确定为最佳构型。分析了专用吸盘的加热机制和传热原理,包括热传导、对流和辐射,并阐明了影响温度分布的关键因素。利用有限元模拟对热控系统设计进行优化,采用结构化网格划分以确保计算精度。实验结果表明,通过精确调节涂层电流变化,可实现最大温差控制在0.2°C以下,表面温度均匀性稳定在约0.05°C,验证了该方法的有效性。这些发现为进一步优化半导体热管理应用中的温度控制系统奠定了坚实的理论基础。