Zhang Shiyang, Zhang Fabi, Sun Tangyou, Chen Zanhui, Liu Xingpeng, Li Haiou, Xie Shifeng, Yang Wanli, Li Yue
Key Laboratory of Microelectronic Devices and Integrated Circuits, Guilin University of Electronic Technology, Guilin 541004, China.
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Nanomaterials (Basel). 2025 Sep 9;15(18):1385. doi: 10.3390/nano15181385.
This work explores the relationship between the thickness and the structural, morphological, and optical features of thermally annealed (GaIn)O thin films grown by pulsed laser deposition at room temperature. The thickness of the (GaIn)O films varied from 20 to 391 nm with an increase in deposition time. The film with a thickness of about 105 nm showed largest grain size as well as the strongest XRD peak intensity, as measured by atomic force microscopy and X-ray diffraction. The studies on the optical properties show that the bandgap value decreased from 5.14 to 4.55 eV with the change in the film thickness from 20 to 391 nm. The film thickness had a significant impact on the structure, morphology, and optical properties of (GaIn)O, and the PLD growth mode notably influenced the film quality. The results suggest that optimizing the film thickness is essential for improving the film quality and achieving the target bandgap.
这项工作探索了室温下通过脉冲激光沉积生长的热退火（GaIn）O薄膜的厚度与结构、形态和光学特性之间的关系。随着沉积时间的增加，（GaIn）O薄膜的厚度从20纳米变化到391纳米。通过原子力显微镜和X射线衍射测量发现，厚度约为105纳米的薄膜显示出最大的晶粒尺寸以及最强的XRD峰强度。光学性质研究表明，随着薄膜厚度从20纳米变化到391纳米，带隙值从5.14电子伏特降低到4.55电子伏特。薄膜厚度对（GaIn）O的结构、形态和光学性质有显著影响，并且脉冲激光沉积生长模式对薄膜质量有显著影响。结果表明，优化薄膜厚度对于提高薄膜质量和实现目标带隙至关重要。
