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用于半导体计量的超宽场成像穆勒矩阵光谱椭偏仪

Ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry for semiconductor metrology.

作者信息

Oh Juntaek, Son Jaehyeon, Yoon Changhyeong, Hwang Eunsoo, Ahn Jinwoo, Lee Jaewon, Lee Jinsoo, Shin Jiyong, Lee Donggun, Lim Seunga, Ahn Jeongho, Sohn Younghoon, Hyun Sangjin, Lee Myungjun, Jo Taeyong

机构信息

Advanced Process Development Lab 4, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.

DRAM Process Development Team, Process Development Department, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1-1 Samsungjeonja-ro, hwaseong-si, Gyeonggi-do, 18848, Republic of Korea.

出版信息

Nat Commun. 2025 Sep 26;16(1):8512. doi: 10.1038/s41467-025-63511-1.

Abstract

We propose an ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry (IMMSE) system for semiconductor metrology. The IMMSE system achieves large-area measurements with a 20 mm × 20 mm field of view (FOV)-the largest FOV reported to date-and a spatial resolution of 6.5 µm. It enables the acquisition of over 10 million Mueller matrix (MM) spectra within the FOV, while a unique signal correction algorithm ensures spectrum consistency across the FOV. Leveraging this numerous MM spectra and machine learning, spatially dense metrology across the entire wafer area is achieved. This approach provides over 1987 times more metrology data and 662 times higher throughput compared to conventional point-based methods, such as scanning electron microscopy. We experimentally demonstrate the potential of the IMMSE for yield enhancement in semiconductor manufacturing by identifying spatial variations of dynamic random access memory (DRAM) structures within individual chips as well as across the wafer.

摘要

我们提出了一种用于半导体计量的超宽场成像穆勒矩阵光谱椭偏仪(IMMSE)系统。该IMMSE系统能够实现大面积测量,其视场(FOV)为20 mm×20 mm,是迄今为止报道的最大视场,空间分辨率为6.5 µm。它能够在视场内采集超过1000万个穆勒矩阵(MM)光谱,同时一种独特的信号校正算法可确保视场内光谱的一致性。利用这些大量的MM光谱和机器学习技术,可实现整个晶圆区域的空间密集计量。与传统的基于点的方法(如扫描电子显微镜)相比,这种方法提供的计量数据多1987倍以上,通量高662倍。我们通过识别单个芯片内以及整个晶圆上动态随机存取存储器(DRAM)结构的空间变化,通过实验证明了IMMSE在提高半导体制造良率方面的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/202d/12475497/00099a98ac9f/41467_2025_63511_Fig1_HTML.jpg

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