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60赫兹电场参数与豌豆根生长抑制的关系。

Relationship of 60-Hz electric-field parameters to the inhibition of growth of Pisum sativum roots.

作者信息

Robertson D, Miller M W, Carstensen E L

出版信息

Radiat Environ Biophys. 1981;19(3):227-33. doi: 10.1007/BF01324190.

Abstract

Roots of Pisum sativum were chronically exposed to 60-Hz electric fields ranging from 215--430 V/m and current densities from 1.5--2.7 mA/cm2. Adjustments of the exposure medium's conductivity (0.035--0.14 mho/m) allowed for distinction between a field or a current induced perturbation in root growth rates. Inhibition of root growth rates was directly related to the magnitude of the applied field and not the current density. The results are consistent with the postulate that the applied field acts upon the cell membrane and perturbs its function.

摘要

将豌豆的根长期暴露在60赫兹的电场中,电场强度范围为215 - 430伏/米,电流密度范围为1.5 - 2.7毫安/平方厘米。通过调整暴露介质的电导率(0.035 - 0.14姆欧/米),可以区分电场或电流对根生长速率的扰动。根生长速率的抑制与所施加电场的强度直接相关,而与电流密度无关。这些结果与所施加的电场作用于细胞膜并扰乱其功能的假设一致。

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