Liu Y J, Barthélémy C, de Bouteiller O, Arpin C, Durand I, Banchereau J
Schering-Plough, Laboratory for Immunological Research, Dardilly, France.
Immunity. 1995 Mar;2(3):239-48. doi: 10.1016/1074-7613(95)90048-9.
Human memory B cells that carry mutated IgV region genes were isolated from tonsils by negative selection of IgD+ naive B cells and CD38+ germinal center B cells and plasma cells. They were mainly found within the intraepithelial areas, but not in the B cell follicles of human tonsils. Memory B cells but not naive B cells have the capacity to present antigen directly to T cells, owing to the constitutive expression of the accessory molecules B7-1/CD80 and B7-2/CD86. Signals through antigen receptors and CD40 antigen result in these two molecules being further up-regulated more rapidly and strongly on memory B cells than on naive B cells. The unique anatomical localization of memory B cells beneath the surface of mucosa, together with their strong APC capacity, may explain the well-known prompt and robust secondary antibody responses.
通过对IgD⁺幼稚B细胞、CD38⁺生发中心B细胞和浆细胞进行阴性选择,从扁桃体中分离出携带突变IgV区域基因的人类记忆B细胞。它们主要存在于上皮内区域,而不在人类扁桃体的B细胞滤泡中。由于辅助分子B7-1/CD80和B7-2/CD86的组成性表达,记忆B细胞而非幼稚B细胞有能力将抗原直接呈递给T细胞。通过抗原受体和CD40抗原产生的信号,导致这两种分子在记忆B细胞上比在幼稚B细胞上更快、更强地进一步上调。记忆B细胞在黏膜表面下方的独特解剖定位,以及它们强大的抗原呈递细胞能力,可能解释了众所周知的迅速而强烈的二次抗体反应。