Zhou W, Jones S W
Department of Physiology and Biophysics, Case Western Reserve University, Cleveland, Ohio 44106, USA.
J Gen Physiol. 1995 Apr;105(4):441-62. doi: 10.1085/jgp.105.4.441.
Currents carried by Ba2+ through calcium channels were recorded in the whole-cell configuration in isolated frog sympathetic neurons. The effect of surface charge on the apparent saturation of the channel with Ba2+ was examined by varying [Ba2+]o and ionic strength. The current increased with [Ba2+]o, and the I-V relation and the activation curve shifted to more positive voltages. The shift of activation could be described by Gouy-Chapman theory, with a surface charge density of 1 e-/140 A2, calculated from the Grahame equation. Changes in ionic strength (replacing N-methyl-D-glucamine with sucrose) shifted the activation curve as expected for a surface charge density of 1 e-/85 A2, in reasonable agreement with the value from changing [Ba2+]o. The instantaneous I-V for fully activated channels also changed with ionic strength, which could be described either by a low surface charge density (less than 1 e-/1,500 A2), or by block by NMG with Kd approximately 300 mM (assuming no surface charge). We conclude that the channel permeation mechanism sees much less surface charge than the gating mechanism. The peak inward current saturated with an apparent Kd = 11.6 mM for Ba2+, while the instantaneous I-V saturated with an apparent Kd = 23.5 mM at 0 mV. This discrepancy can be explained by a lower surface charge near the pore, compared to the voltage sensor. After correction for a surface charge near the pore of 1 e-/1,500 A2, the instantaneous I-V saturated as a function of local [Ba2+]o, with Kd = 65 mM. These results suggest that the channel pore does bind Ba2+ in a saturable manner, but the current-[Ba2+]o relationship may be significantly affected by surface charge.
在分离的青蛙交感神经元中,采用全细胞模式记录了Ba2+通过钙通道携带的电流。通过改变[Ba2+]o和离子强度,研究了表面电荷对通道Ba2+表观饱和度的影响。电流随[Ba2+]o增加,I-V关系和激活曲线向更正的电压偏移。激活的偏移可用Gouy-Chapman理论描述,表面电荷密度为1 e-/140 A2,由Grahame方程计算得出。离子强度的变化(用蔗糖替代N-甲基-D-葡糖胺)使激活曲线发生偏移,正如表面电荷密度为1 e-/85 A2时所预期的那样,与改变[Ba2+]o得到的值合理相符。完全激活通道的瞬时I-V也随离子强度变化,这可以用低表面电荷密度(小于1 e-/1500 A2)或NMG的阻滞来描述,Kd约为300 mM(假设无表面电荷)。我们得出结论,通道的通透机制比门控机制所感受到的表面电荷要少得多。内向电流峰值对Ba2+的表观Kd = 11.6 mM时达到饱和,而瞬时I-V在0 mV时表观Kd = 23.5 mM时达到饱和。与电压传感器相比,孔附近表面电荷较低可以解释这种差异。校正孔附近1 e-/1500 A2的表面电荷后,瞬时I-V作为局部[Ba2+]o的函数达到饱和,Kd = 65 mM。这些结果表明,通道孔确实以可饱和的方式结合Ba2+,但电流-[Ba2+]o关系可能会受到表面电荷的显著影响。