Kemper B, Brown D T
J Virol. 1976 Jun;18(3):1000-15. doi: 10.1128/JVI.18.3.1000-1015.1976.
With the exception of mutants in gene 49, all mutants in phage T4 defective in the process of head filling accumulate a normal replicative DNA intermediate of 200S. Mutants in gene 49 produce a very fast-sedimenting (VFS) DNA with s values of greater than 1,000S. The intracellular development of the VFS-DNA generated in gene 49-defective phage-infected cells was followed by sedimentation analysis of crude lysates on neutral sucrose gradients. It was observed that the production of a 200S replicative intermediate is one step in the development of VFS-DNA. After restoring permissive conditions the development of the VFS-DNA can be reversed, but the 200S form is not regenerated under these conditions. The process of head filling can take place from the VFS-DNA under permissive conditions. From the absence of other components in the VFS-DNA complexes, its high resistance to shearing, its resistance against the attack of the single-strand-specific nuclease S1, and from its appearance in the electron microscope, a complex structure of tightly packed DNA is inferred. The demonstration by the electron microscope of branched DNA structures sometimes closely related to partially filled heads is taken in support of the idea that the process of head filling in gene 49-defective phage-infected cells is blocked by some steric hindrance in the DNA. In light of these results, the role of gene 49 is discussed as a control function for the clearance of these structures. A fixation procedure for cross-linking of gene 49-defective heads to the VFS-DNA allowed us to study progressive stages in the process of head filling. Electron microscopic evidence is presented which suggests that during the initial events the DNA accumulates in the vertexes of the head.
除基因49的突变体之外,噬菌体T4中在头部装填过程有缺陷的所有突变体都会积累一种正常的200S复制性DNA中间体。基因49的突变体产生沉降速度非常快(VFS)的DNA,沉降系数(s值)大于1000S。通过对基因49缺陷型噬菌体感染细胞中产生的VFS-DNA进行粗裂解物在中性蔗糖梯度上的沉降分析,追踪其在细胞内的发育过程。观察到200S复制中间体的产生是VFS-DNA发育过程中的一个步骤。恢复允许条件后,VFS-DNA的发育可以逆转,但在这些条件下不会再生出200S形式。在允许条件下,头部装填过程可以从VFS-DNA开始。从VFS-DNA复合物中不存在其他成分、其对剪切的高抗性、其对单链特异性核酸酶S1攻击的抗性以及其在电子显微镜下的外观,可以推断出其是紧密堆积的DNA的复杂结构。电子显微镜显示有时与部分装填的头部密切相关的分支DNA结构,这支持了这样一种观点,即基因49缺陷型噬菌体感染细胞中的头部装填过程被DNA中的某种空间位阻所阻断。根据这些结果,讨论了基因49作为清除这些结构的控制功能的作用。一种将基因49缺陷型头部与VFS-DNA交联的固定程序使我们能够研究头部装填过程中的进展阶段。提供了电子显微镜证据,表明在初始事件期间DNA积累在头部的顶点。