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谷氨酸与印记记忆:谷氨酸受体在印记记忆编码中的作用

Glutamate and imprinting memory: the role of glutamate receptors in the encoding of imprinting memory.

作者信息

Johnston A N, Rogers L J, Johnston G A

机构信息

Department of Physiology, University of New England, Armidale NSW, Australia.

出版信息

Behav Brain Res. 1993 Apr 30;54(2):137-43. doi: 10.1016/0166-4328(93)90072-x.

Abstract

Glutamate-sensitive receptors have been implicated in many forms of neural plasticity and learning, including imprinting of chicks. Previous studies have indicated that glutamate binding levels in the left intermediate medial hyperstriatum ventrale (IMHV) region of the chick forebrain increase as a correlate of the acquisition of an imprinting memory; however, it has not been determined whether this is due to an increase in the number of glutamate receptors or to increased receptor affinity. The area specificity of these changes, within the left and right hemisphere, was also unexplored. We have performed Scatchard displacement binding analyses to examine changes in both the number and affinity of glutamate receptors in the left and right hyperstriatum ventrale (HV) and also the left and right archistriatal/lobus parolfactorius (AS/LPO) areas from imprinted and non-imprinted chicks. The results of this study demonstrate lateralised increases in both the number and affinity of glutamate receptors in the left HV area at 7-8 h after imprinting. Significant increases in the affinity, but not the number, of glutamate receptors were found in the left AS/LPO. This suggests that the left AS/LPO, which has previously been shown to be involved in the acquisition of a passive avoidance memory, may also be involved in the formation of an imprinting memory.

摘要

谷氨酸敏感受体与多种形式的神经可塑性和学习有关,包括小鸡的印记学习。先前的研究表明,小鸡前脑左侧中间内侧腹侧超纹状体(IMHV)区域的谷氨酸结合水平会随着印记记忆的获得而增加;然而,尚未确定这是由于谷氨酸受体数量增加还是受体亲和力增加所致。左右脑半球内这些变化的区域特异性也未得到探索。我们进行了Scatchard置换结合分析,以研究来自印记小鸡和非印记小鸡的左右腹侧超纹状体(HV)以及左右古纹状体/副嗅叶(AS/LPO)区域中谷氨酸受体数量和亲和力的变化。这项研究的结果表明,印记后7-8小时,左侧HV区域谷氨酸受体的数量和亲和力均出现侧化增加。在左侧AS/LPO中发现谷氨酸受体的亲和力显著增加,但数量未增加。这表明,先前已证明参与被动回避记忆获得的左侧AS/LPO,可能也参与印记记忆的形成。

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