Karaçorlu M A, Peyman G A, Cruz S S
LSU Eye Center, Louisiana State University Medical Center School of Medicine, New Orleans 70112.
Int Ophthalmol. 1993 Apr;17(2):89-93. doi: 10.1007/BF00942781.
The semiconductor diode laser is a near-infrared laser; its 810-nm wavelength is maximally absorbed by melanin and has substantial transmissibility through cornea and sclera. Indocyanine green is the best photosensitive dye for the diode laser. The level of corneal damage produced by 810-nm diode laser, with and without absorbing dye (indocyanine green), and photoablative capabilities of this wavelength were studied using albino rabbits. We concluded that the contact application of this wavelength to the cornea in the presence of energy-absorbing dye causes both stromal and endothelial thermal damage. Therefore, 810-nm near-infrared semiconductor diode lasers are not suitable for photorefractive keratectomy or photoablative reprofiling.
半导体二极管激光器是一种近红外激光器；其810纳米波长的光被黑色素最大程度地吸收，并且对角膜和巩膜具有较高的穿透性。吲哚菁绿是二极管激光器的最佳光敏染料。我们使用白化兔研究了810纳米二极管激光器在有或没有吸收染料（吲哚菁绿）的情况下对角膜造成的损伤程度，以及该波长的光消融能力。我们得出结论，在存在能量吸收染料的情况下，将此波长的光接触应用于角膜会导致基质和内皮热损伤。因此，810纳米近红外半导体二极管激光器不适用于准分子激光原位角膜磨镶术或光消融重塑手术。
