Ross FM, Tersoff J, Tromp RM
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Microsc Microanal. 1998 May;4(3):254-263. doi: 10.1017/s1431927698980254.
: We describe here real-time, in situ observations of the formation of nanosize germanium (Ge) islands on silicon (Si). The deposition of Ge onto electron-transparent Si(100) takes place in a UHV transmission electron microscope that has been modified to allow chemical vapor deposition to be carried out in the polepiece. We recorded the growth process at video rate and were therefore able to follow the evolution of individual islands. As the islands grew, we observed a coarsening process similar to classical Ostwald ripening, but which leads at certain times to a bimodal distribution of island sizes. We show that this phenomenon can be understood using a model in which a conventional coarsening process is modified by a transition between two different island shapes.
我们在此描述了在硅（Si）上形成纳米尺寸锗（Ge）岛的实时原位观察。锗在电子透明的Si(100)上的沉积是在一台经过改装的超高真空透射电子显微镜中进行的，该显微镜已被改装以允许在极靴中进行化学气相沉积。我们以视频速率记录了生长过程，因此能够跟踪单个岛的演变。随着岛的生长，我们观察到一个类似于经典奥斯特瓦尔德熟化的粗化过程，但在某些时候会导致岛尺寸的双峰分布。我们表明，这种现象可以用一个模型来理解，在该模型中，传统的粗化过程通过两种不同岛形状之间的转变而被修改。
