InxGa1-xAs/GaAs应变量子阱中的浓度依赖性带隙偏移 - Suppr

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Concentration-dependent band offset in InxGa1-xAs/GaAs strained quantum wells.

作者信息

Joyce MJ, Johnson MJ, Gal M, Usher BF

出版信息

Phys Rev B Condens Matter. 1988 Nov 15;38(15):10978-10980. doi: 10.1103/physrevb.38.10978.

DOI:10.1103/physrevb.38.10978

PMID:9945972

Abstract

摘要

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Concentration-dependent band offset in InxGa1-xAs/GaAs strained quantum wells.

作者信息

Joyce MJ, Johnson MJ, Gal M, Usher BF

出版信息

Phys Rev B Condens Matter. 1988 Nov 15;38(15):10978-10980. doi: 10.1103/physrevb.38.10978.

DOI:10.1103/physrevb.38.10978

PMID:9945972

Abstract

摘要