Pressure dependence of photoluminescence in InxGa1-xAs/GaAs strained quantum wells.
作者信息
Hou HQ, Wang LJ, Tang RM, Zhou JM
出版信息
Phys Rev B Condens Matter. 1990 Aug 15;42(5):2926-2931. doi: 10.1103/physrevb.42.2926.
PMID:9995783
Abstract
摘要
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Pressure dependence of photoluminescence in InxGa1-xAs/GaAs strained quantum wells.InxGa1-xAs/GaAs应变量子阱中光致发光的压力依赖性
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