3C-、2H-、4H-、6H-碳化硅以及硅在基本带隙附近的详细能带结构。 - Suppr

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超能文献

Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap.

作者信息

Persson C, Lindefelt U

出版信息

Phys Rev B Condens Matter. 1996 Oct 15;54(15):10257-10260. doi: 10.1103/physrevb.54.10257.

DOI:10.1103/physrevb.54.10257

PMID:9984797

Abstract

摘要

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