Yang Guixia, Pang Yuanlong, Yang Yuqing, Liu Jianyong, Peng Shuming, Chen Gang, Jiang Ming, Zu Xiaotao, Fang Xuan, Zhao Hongbin, Qiao Liang, Xiao Haiyan
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China.
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics, Nanjing 210000, China.
Nanomaterials (Basel). 2019 Feb 2;9(2):194. doi: 10.3390/nano9020194.
Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices' performance is restored to some extent.
碳化硅（SiC）已被广泛应用于电子辐射探测器和原子电池传感器。然而，SiC在高剂量辐照下的物理性质及其相关的电响应尚未得到充分理解。同时，该领域目前的研究通常集中在电学性质和缺陷形成上，由于缺陷本身不易表征，且难以确定其是来自原材料还是仅在辐照时存在，因此这些研究并不适合解释辐照效应的内在响应。因此，需要一种更直接的辐照效应量化方法来建立辐照诱导电流与辐射通量之间的直接关联。本文报道了4H-SiC肖特基势垒二极管（SBD）在高剂量电子辐照下的在线电学性质，并采用原位噪声诊断分析来证明辐照诱导缺陷与微观电子性质之间的相关性。研究发现，电子束对4H-SiC SBD具有强烈的辐射破坏作用。在线电子诱导电流和噪声信息揭示了一种类似自修复的过程，其中器件的内部缺陷可能在室温下退火，器件性能在一定程度上得以恢复。
