3C-SiC 纳米线中堆垛层错引起的紫外-可见光光致发光。

Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.

机构信息

Guangdong Provincial Engineering Research Center of Molecular Imaging, The Fifth Affiliated Hospital, Sun Yat-sen University, Zhuhai, 51900, People's Republic of China. Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, People's Republic of China.

出版信息

Nanotechnology. 2019 Jun 7;30(23):235601. doi: 10.1088/1361-6528/ab084f.

DOI:10.1088/1361-6528/ab084f

PMID:30907378

Abstract

The relationship between stacking faults and optical properties in 3C-SiC nanowires is reported in this paper. 3C-SiC nanowires prepared at 900 °C have high density stacking faults. The stacking faults cause a change in the Si-C atom stacking sequence and form nanosegments of 4H-SiC and 6H-SiC in the 3C-SiC matrix. The mixture of polytypes leads to a shift in the peaks and the addition of peaks in both Raman spectra and photoluminescence (PL) spectra. The Raman peaks are centered at 785 cm and at 935 cm and correspond to the transverse optic mode and the longitudinal optic mode of 3C-SiC, respectively. The PL peaks are blueshifted and the emissions are in the ultraviolet-visible light band.

摘要

本文报道了 3C-SiC 纳米线中堆垛层错与光学性质的关系。在 900°C 下制备的 3C-SiC 纳米线具有高密度的堆垛层错。堆垛层错导致 Si-C 原子堆积序列发生变化，并在 3C-SiC 基体中形成 4H-SiC 和 6H-SiC 的纳米段。多型混合物导致拉曼光谱和光致发光（PL）光谱中峰的位移和附加峰的出现。拉曼峰的中心位于 785cm 和 935cm 处，分别对应于 3C-SiC 的横向光学模和纵向光学模。PL 峰发生蓝移，发射处于紫外可见光波段。