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Exciton localization in InxGa1-xAs/GaAs quantum wells observed by temperature-modulated photoluminescence.

作者信息

Gal M, Xu ZY, Green F, Usher BF

出版信息

Phys Rev B Condens Matter. 1991 Jan 15;43(2):1546-1550. doi: 10.1103/physrevb.43.1546.

DOI:10.1103/physrevb.43.1546
PMID:9997404
Abstract
摘要

相似文献

1
Exciton localization in InxGa1-xAs/GaAs quantum wells observed by temperature-modulated photoluminescence.通过温度调制光致发光观察到InxGa1-xAs/GaAs量子阱中的激子局域化。
Phys Rev B Condens Matter. 1991 Jan 15;43(2):1546-1550. doi: 10.1103/physrevb.43.1546.
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Phys Rev B Condens Matter. 1995 Jul 15;52(4):2784-2788. doi: 10.1103/physrevb.52.2784.

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