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Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation.

作者信息

Trucks GW, Raghavachari K, Higashi GS, Chabal YJ

出版信息

Phys Rev Lett. 1990 Jul 23;65(4):504-507. doi: 10.1103/PhysRevLett.65.504.

DOI:10.1103/PhysRevLett.65.504
PMID:10042937
Abstract
摘要

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Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation.硅表面氢氟酸蚀刻机理：氢钝化的理论理解
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Comment on "Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation".
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