Tokarska Klaudia, Shi Qitao, Otulakowski Lukasz, Wrobel Pawel, Ta Huy Quang, Kurtyka Przemyslaw, Kordyka Aleksandra, Siwy Mariola, Vasylieva Margaryta, Forys Aleksander, Trzebicka Barbara, Bachmatiuk Alicja, Rümmeli Mark H
Centre of Polymer and Carbon Materials, Polish Academy of Sciences (CMPW PAN), M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland.
Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Energy, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, People's Republic of China.
R Soc Open Sci. 2020 Sep 16;7(9):200736. doi: 10.1098/rsos.200736. eCollection 2020 Sep.
A facile procedure for the synthesis of ultra-fine silicon nanoparticles without the need for a Schlenk vacuum line is presented. The process consists of the production of a (HSiO) sol-gel precursor based on the polycondensation of low-cost trichlorosilane (HSiCl), followed by its annealing and etching. The obtained materials were thoroughly characterized after each preparation step by electron microscopy, Fourier transform and Raman spectroscopy, X-ray dispersion spectroscopy, diffraction methods and photoluminescence spectroscopy. The data confirm the formation of ultra-fine silicon nanoparticles with controllable average diameters between 1 and 5 nm depending on the etching time.
本文提出了一种无需使用Schlenk真空线合成超细硅纳米颗粒的简便方法。该过程包括基于低成本三氯硅烷（HSiCl）的缩聚反应制备（HSiO）溶胶-凝胶前驱体，随后对其进行退火和蚀刻。在每个制备步骤之后，通过电子显微镜、傅里叶变换和拉曼光谱、X射线色散光谱、衍射方法和光致发光光谱对所得材料进行了全面表征。数据证实，根据蚀刻时间的不同，形成了平均直径在1至5纳米之间可控的超细硅纳米颗粒。
