硅（100）上外延NiSi2界面处的肖特基势垒不均匀性。 - Suppr

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超能文献

Schottky-barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100).

作者信息

Tung RT, Levi AF, Sullivan JP, Schrey F

出版信息

Phys Rev Lett. 1991 Jan 7;66(1):72-75. doi: 10.1103/PhysRevLett.66.72.

DOI:10.1103/PhysRevLett.66.72

PMID:10043145

Abstract

摘要

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引用本文的文献

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Sci Rep. 2017 Nov 30;7(1):16669. doi: 10.1038/s41598-017-16803-6.

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相似文献

Schottky-barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100).

Phys Rev Lett. 1991 Jan 7;66(1):72-75. doi: 10.1103/PhysRevLett.66.72.

Electronic structure and Schottky-barrier heights of (111) NiSi2/Si A- and B-type interfaces.

Phys Rev Lett. 1989 Sep 11;63(11):1168-1171. doi: 10.1103/PhysRevLett.63.1168.

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Sci Rep. 2017 Nov 30;7(1):16669. doi: 10.1038/s41598-017-16803-6.

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface.

J Phys Condens Matter. 2013 Nov 6;25(44):445005. doi: 10.1088/0953-8984/25/44/445005. Epub 2013 Sep 26.

Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.

Phys Rev B Condens Matter. 1990 Nov 15;42(15):9598-9608. doi: 10.1103/physrevb.42.9598.

Comment on "Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces".

Phys Rev Lett. 1990 Aug 6;65(6):807. doi: 10.1103/PhysRevLett.65.807.

Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces.

Phys Rev Lett. 1990 Mar 26;64(13):1589-1592. doi: 10.1103/PhysRevLett.64.1589.

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

Nanotechnology. 2015 May 29;26(21):215702. doi: 10.1088/0957-4484/26/21/215702. Epub 2015 May 1.

Schottky barriers at NiSi2/Si(111) interfaces.

Phys Rev B Condens Matter. 1990 Jul 15;42(3):1696-1704. doi: 10.1103/physrevb.42.1696.

Calculation of NiSi2-Si Schottky barrier height using an interface-defect model.

Phys Rev B Condens Matter. 1989 Oct 15;40(11):8024-8025. doi: 10.1103/physrevb.40.8024.

引用本文的文献

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Sci Rep. 2017 Nov 30;7(1):16669. doi: 10.1038/s41598-017-16803-6.