Paskaleva Albena, Spassov Dencho, Blagoev Blagoy, Terziyska Penka
Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria.
Materials (Basel). 2024 Jul 18;17(14):3546. doi: 10.3390/ma17143546.
The physical properties of ZnO can be tuned efficiently and controllably by doping with the proper element. Doping of ZnO thin films with 3D transition metals that have unpaired electron spins (e.g., Fe, Co, Ni, etc.) is of particular interest as it may enable magnetic phenomena in the layers. Atomic layer deposition (ALD) is the most advanced technique, which ensures high accuracy throughout the deposition process, producing uniform films with controllable composition and thickness, forming smooth and sharp interfaces. In this work, ALD was used to prepare Ni- or Fe-doped ZnO thin films. The dielectric and electrical properties of the films were studied by measuring the standard current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) characteristics at different temperatures. Spectral ellipsometry was used to assess the optical bandgap of the layers. We established that the dopant strongly affects the electric and dielectric behavior of the layers. The results provide evidence that different polarization mechanisms dominate the dielectric response of Ni- and Fe-doped films.
通过掺杂适当的元素，可以有效且可控地调节氧化锌（ZnO）的物理性质。用具有未成对电子自旋的三维过渡金属（如铁、钴、镍等）对ZnO薄膜进行掺杂特别受关注，因为这可能使这些层中出现磁现象。原子层沉积（ALD）是最先进的技术，它在整个沉积过程中确保高精度，能制备出成分和厚度可控的均匀薄膜，形成光滑且清晰的界面。在这项工作中，采用ALD制备了镍或铁掺杂的ZnO薄膜。通过在不同温度下测量标准电流-电压（I-V）、电容-电压（C-V）和电容-频率（C-f）特性，研究了薄膜的介电和电学性质。用光谱椭偏仪评估了这些层的光学带隙。我们确定，掺杂剂对这些层的电学和介电行为有强烈影响。结果表明，不同的极化机制主导了镍和铁掺杂薄膜的介电响应。
