铟和铜对N型磁性半导体Ba(Zn,Co)As中铁磁性的掺杂效应。

Zhao Xueqin, Dong Jinou, Xie Lingfeng, Yang Qiaolin, Pan Xun, Tang Haoyuan, Xu Zhicheng, Zhi Guoxiang, Gu Yilun, Fu Licheng, Ning Fanlong

School of Physics, Zhejiang University, Hangzhou, 310027, China.

State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.

Sci Rep. 2025 Mar 28;15(1):10696. doi: 10.1038/s41598-025-94897-z.

We report the manipulation of ferromagnetism in n-type magnetic semiconductor Ba(Zn,Co)As through carriers' doping. Doping In or Cu into Zn-sites introduces additional n-type or p-type carriers, respectively. Focusing on Ba(ZnCo)As which has a [Formula: see text] ∼ 31 K, In doping introduces additional n-type carriers and 2% In doping drastically improves the ferromagnetic transition temperature by 16% to 36 K. In contrast, 1.5% Cu doping suppresses [Formula: see text] by 52% to 15 K; 3% Cu doping turns the dominant carrier to p-type, and eventually transforms the ferromagnetic ordering into a paramagnetic state. Our experimental results unequivocally demonstrate that the magnetic ordering in Ba(Zn,Co)As is carriers' mediated ferromagnetism, and its ground states can be manipulated by carriers.

我们报道了通过载流子掺杂对n型磁性半导体Ba(Zn,Co)As中铁磁性的调控。在Zn位点掺杂In或Cu分别引入了额外的n型或p型载流子。聚焦于居里温度（$T_C$）约为31 K的Ba(ZnCo)As，In掺杂引入了额外的n型载流子，2%的In掺杂使铁磁转变温度大幅提高16%，达到36 K。相比之下，1.5%的Cu掺杂使$T_C$降低52%，至15 K；3%的Cu掺杂使主导载流子变为p型，并最终将铁磁有序转变为顺磁状态。我们的实验结果明确表明，Ba(Zn,Co)As中的磁有序是载流子介导的铁磁性，其基态可通过载流子进行调控。