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通过CMOS兼容工艺实现耦合系数得到改善的微机械超声换能器。

Micromachined ultrasound transducers with improved coupling factors from a CMOS compatible process.

作者信息

Eccardt PC, Niederer K

机构信息

Siemens AG, ZT KM 2, Munchen, Germany.

出版信息

Ultrasonics. 2000 Mar;38(1-8):774-80. doi: 10.1016/s0041-624x(99)00085-2.

Abstract

For medical high frequency acoustic imaging purposes the reduction in size of a single transducer element for one-dimensional and even more for two-dimensional arrays is more and more limited by fabrication and cabling technology. In the fields of industrial distance measurement and simple object recognition low cost phased arrays are lacking. Both problems can be solved with micromachined ultrasound transducers (MUTs). A single transducer is made of a large number of microscopic elements. Because of the array structure of these transducers, groups of elements can be built up and used as a phased array. By integrating parts of the sensor electronics on chip, the cabling effort for arrays can be reduced markedly. In contrast to standard ultrasonic technology, which is based on massive thickness resonators, vibrating membranes are the radiating elements of the MUTs. New micromachining technologies have emerged, allowing a highly reproducible fabrication of electrostatically driven membranes with gap heights below 500 nm. A microelectronic BiCMOS process was extended for surface micromechanics (T. Scheiter et al., Proceedings 11th European Conference on Solid-State Transducers, Warsaw, Vol. 3, 1997, pp. 1595-1598). Additional process steps were included for the realization of the membranes which form sealed cavities with the underlying substrate. Membrane and substrate are the opposite electrodes of a capacitive transducer. The transducers can be integrated monolithically on one chip together with the driving, preamplifying and multiplexing circuitry, thus reducing parasitic capacities and noise level significantly. Owing to their low mass the transducers are very well matched to fluid loads, resulting in a very high bandwidth of 50-100% (C. Eccardt et al., Proceedings Ultrasonics Symposium, San Antonio, Vol. 2, 1996, pp. 959-962; P.C. Eccardt et al., Proceedings of the 1997 Ultrasonics Symposium, Toronto, Vol. 2, 1997, pp. 1609-1618). In the following it is shown how the BiCMOS process has been modified to meet the demands for ultrasound generation and reception. Bias and driving voltages have been reduced down to the 10 V range. The electromechanical coupling is now almost comparable with that for piezoelectric transducers. The measurements exhibit sound pressures and bandwidths that are at least comparable with those of conventional piezoelectric transducer arrays.

摘要

对于医学高频声学成像而言,一维阵列乃至二维阵列中单个换能器元件尺寸的减小,越来越受到制造和布线技术的限制。在工业距离测量和简单目标识别领域,缺乏低成本的相控阵。这两个问题都可以通过微机械超声换能器(MUT)来解决。单个换能器由大量微观元件构成。由于这些换能器的阵列结构,可以将元件分组并用作相控阵。通过将部分传感器电子元件集成在芯片上,阵列的布线工作可显著减少。与基于厚膜谐振器的标准超声技术不同,振动膜是MUT的辐射元件。新的微加工技术已经出现,能够高度可重复地制造间隙高度低于500纳米的静电驱动膜。一种微电子BiCMOS工艺被扩展用于表面微机械加工(T. Scheiter等人,第11届欧洲固态换能器会议论文集,华沙,第3卷,1997年,第1595 - 1598页)。为实现与下层衬底形成密封腔的膜,增加了额外的工艺步骤。膜和衬底是电容式换能器的相对电极。换能器可以与驱动电路、前置放大电路和多路复用电路一起单片集成在一个芯片上,从而显著降低寄生电容和噪声水平。由于其质量低,换能器与流体负载匹配良好,产生50 - 100%的非常高的带宽(C. Eccardt等人,超声研讨会论文集,圣安东尼奥,第2卷,1996年,第959 - 962页;P.C. Eccardt等人,1997年超声研讨会论文集,多伦多,第2卷,1997年,第1609 - 1618页)。以下展示了如何修改BiCMOS工艺以满足超声产生和接收的要求。偏置电压和驱动电压已降低至10V范围。现在机电耦合几乎与压电换能器相当。测量结果显示,声压和带宽至少与传统压电换能器阵列相当。

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