Bachtold A, Hadley P, Nakanishi T, Dekker C
Department of Applied Physics, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands.
Science. 2001 Nov 9;294(5545):1317-20. doi: 10.1126/science.1065824. Epub 2001 Oct 4.
We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10(5)), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
我们展示了基于单根碳纳米管的场效应晶体管逻辑电路。我们的器件布局具有局部栅极,可在栅极与纳米管之间提供出色的电容耦合,实现从p型掺杂到n型掺杂的纳米管强静电掺杂,并能研究沿一维纳米管的电荷非常规长程屏蔽。这些晶体管展现出良好的器件特性,如高增益(>10)、大开关比(>10⁵)以及室温工作。重要的是,局部栅极布局允许在单个芯片上集成多个器件。实际上,我们展示了一晶体管、二晶体管和三晶体管电路,它们展现出一系列数字逻辑操作,如反相器、逻辑或非门、静态随机存取存储器单元以及交流环形振荡器。