错取向InAlAs(111)变质衬底上InAs量子点的应变弛豫

Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates.

作者信息

Tuktamyshev Artur, Vichi Stefano, Cesura Federico Guido, Fedorov Alexey, Carminati Giuseppe, Lambardi Davide, Pedrini Jacopo, Vitiello Elisa, Pezzoli Fabio, Bietti Sergio, Sanguinetti Stefano

机构信息

Isituto Nazionale di Fisica Nucleare, Sezione di Milano-Bicocca, 20100 Milano, Italy.

Department of Materials Science, University of Milano-Bicocca, 20100 Milano, Italy.

出版信息

Nanomaterials (Basel). 2022 Oct 12;12(20):3571. doi: 10.3390/nano12203571.

DOI:10.3390/nano12203571

PMID:36296766

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9607536/

Abstract

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

摘要

我们详细研究了应变弛豫和盖帽外延生长在通过液滴外延法自组装InAs量子点过程中的作用。InAs量子点是在生长于GaAs(111)A取向错误衬底上的In0.6Al0.4As变质缓冲层上实现的。光学跃迁的量子电子计算与量子点发射特性之间的比较突出表明，较大量子点的发射存在强烈猝灭现象。盖帽过程中表面形貌的详细分析表明，存在一个临界尺寸，超过该尺寸量子点会发生塑性弛豫。