Zhang S
Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211, USA.
Phys Rev Lett. 2000 Jul 10;85(2):393-6. doi: 10.1103/PhysRevLett.85.393.
Hirsch [Phys. Rev. Lett. 83, 1834 (1999)] recently proposed a spin Hall effect based on the anomalous scattering mechanism in the absence of spin-flip scattering. Since the anomalous scattering causes both anomalous currents and a finite spin-diffusion length, we derive the spin Hall effect in the presence of spin diffusion from a semiclassical Boltzmann equation. When the formulation is applied to certain metals and semiconductors, the magnitude of the spin Hall voltage due to the spin accumulation is found to be much larger than that of magnetic multilayers. An experiment is proposed to measure this spin Hall effect.
赫希[《物理评论快报》83, 1834 (1999)]最近提出了一种基于反常散射机制且不存在自旋翻转散射的自旋霍尔效应。由于反常散射会导致反常电流和有限的自旋扩散长度，我们从半经典玻尔兹曼方程推导出存在自旋扩散时的自旋霍尔效应。当将该公式应用于某些金属和半导体时，发现由自旋积累引起的自旋霍尔电压的大小比磁性多层膜的大得多。本文提出了一个测量这种自旋霍尔效应的实验。
