Kaviraj Bhaskar, Sinha Jaivardhan
Department of Physics, School of Natural Sciences, Shiv Nadar University Gautam Budh Nagar 203207 Uttar Pradesh India
Department of Physics and Nanotechnology, SRM Institute of Science and Technology Kattankulathur 603203 Tamil Nadu India.
RSC Adv. 2018 Jul 12;8(44):25079-25093. doi: 10.1039/c8ra04001j. eCollection 2018 Jul 9.
In this review article, an insight of the physics that explains the phenomenon of torques induced by currents in systems comprising ferromagnetic (FM)-non-magnetic (NM) materials has been provided with particular emphasis on experiments that concern the observation of such torques. An important requirement of systems that enables observation of such relativistic torques is that the material needs to possess large spin-orbit coupling (SOC). In addition, the FM/NM interface should be of high quality so that spin angular momentum can be transferred across the interface. Under such conditions, the magnetization of a magnetic material experiences a torque, and can be reversed, thanks to the phenomenon of the spin Hall effect in the NM layer with large SOC. A reciprocal process also occurs, in which a changing magnetization orientation can produce spin current, current that supports spin angular momentum. It is important to know how these processes occur which often tells us about the close connection between magnetization and spin transport. This paves the way to transform technologies that process information magnetization direction, namely in magnetic recording industry. This field of physics being relatively young much remains to be understood and explored. Through this review we have attempted to provide a glimpse of existing understanding of current induced torques in ferromagnetic thin film heterostructures along with some future challenges and opportunities of this evolving area of spintronics. Specifically, we have discussed the state-of-the art demonstrations of current-induced torque devices that show great promise for enhancing the functionality of magnetic memory devices.
在这篇综述文章中,我们深入探讨了物理学原理,该原理解释了由铁磁(FM)-非磁性(NM)材料组成的系统中电流感应产生的转矩现象,并特别强调了与这种转矩观测相关的实验。能够观测到这种相对论性转矩的系统的一个重要要求是材料需要具备大的自旋轨道耦合(SOC)。此外,FM/NM界面应具有高质量,以便自旋角动量能够在界面间转移。在这种条件下,磁性材料的磁化会受到一个转矩作用,并且由于具有大SOC的NM层中的自旋霍尔效应现象,磁化方向可以被反转。一个互易过程也会发生,即磁化方向的变化能够产生自旋电流,这种电流支持自旋角动量。了解这些过程如何发生很重要,这通常能让我们了解磁化与自旋输运之间的紧密联系。这为变革基于磁化方向处理信息的技术,即在磁记录行业,铺平了道路。这个物理领域相对较新,仍有许多有待理解和探索的地方。通过这篇综述,我们试图简要介绍对铁磁薄膜异质结构中电流感应转矩的现有理解,以及自旋电子学这个不断发展领域的一些未来挑战和机遇。具体而言,我们讨论了电流感应转矩器件的最新进展,这些器件在增强磁存储器件功能方面显示出巨大潜力。